단일 층 poly(3-hexylthiophene) 의 농도와 두께에 따른 저항 소자의 전기적 특성에 대한 연구
- Title
- 단일 층 poly(3-hexylthiophene) 의 농도와 두께에 따른 저항 소자의 전기적 특성에 대한 연구
- Other Titles
- A study on electrical characteristics for the resistance switchable devices with different concentration and thickness of the poly(3-hexylthiophene) monolayer
- Author
- 류준정
- Alternative Author(s)
- LIU JUNTING
- Advisor(s)
- 김태환
- Issue Date
- 2015-02
- Publisher
- 한양대학교
- Degree
- Master
- Abstract
- Resistance switchable devices based on the poly(3-hexylthiophene) (P3HT) layer were fabricated by using a spin-coating method, and the effect of the concentration and the thickness of the P3HT monolayer on the electrical characteristics of the resistance switchable devices was investigated. Current-voltage (I-V) characteristics of the Au/P3HT monolayer/indium-tin-oxide-coated glass devices with different concentrations and thicknesses of the P3HT layer showed resistance switchability. I-V characteristics for the devices showed that the resistance switchable characteristics of the resistance switchable devices were affected by changing concentration and thickness of the P3HT layer. The
switching mechanisms of the devices are described by I-V curves and energy band diagrams.
- URI
- https://repository.hanyang.ac.kr/handle/20.500.11754/129136http://hanyang.dcollection.net/common/orgView/200000426087
- Appears in Collections:
- GRADUATE SCHOOL[S](대학원) > ELECTRONICS AND COMPUTER ENGINEERING(전자컴퓨터통신공학과) > Theses (Master)
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