단일 층 poly(3-hexylthiophene) 의 농도와 두께에 따른 저항 소자의 전기적 특성에 대한 연구

Abstract

Resistance switchable devices based on the poly(3-hexylthiophene) (P3HT) layer were fabricated by using a spin-coating method, and the effect of the concentration and the thickness of the P3HT monolayer on the electrical characteristics of the resistance switchable devices was investigated. Current-voltage (I-V) characteristics of the Au/P3HT monolayer/indium-tin-oxide-coated glass devices with different concentrations and thicknesses of the P3HT layer showed resistance switchability. I-V characteristics for the devices showed that the resistance switchable characteristics of the resistance switchable devices were affected by changing concentration and thickness of the P3HT layer. The switching mechanisms of the devices are described by I-V curves and energy band diagrams.