전기화학법을 이용한 고강도 나노트윈 구리 박막 형성에 관한 연구

Abstract

Copper is the common materials for the semiconductor and battery industry. Especially, electrodeposited copper is the most widely used for its excellent electrical, physical properties and low cost. Recently, high strength copper thin film with also high conductivity is urgently required. Generally, according to the Hall-petch relation, the grain size decrease causes tensile strength of copper. However, electrical conductivity was significantly decreased by this strengthening method as electron scattering can be caused by grain boundary. In this study, electrochemical deposition of copper by pulse and pulse reverse current with extremely high peak current density was investigated. Various experiments were carried out to control the microstructure and achieve the high mechanical and electrical property. The Tensile Strength of electrodeposited copper films were measured by Tensile Tester. Also, microstructure and electrical resistivity of electrodeposited copper films were investigated.