이황화 몰리브덴의 합성온도와 미세구조에 관한 연구

Abstract

We investigated about MoS2 large area deposition process. Among the several Process methods being studied, we have studied Sulfurization method which is easy to be commercialized. MoS2 layers were prepared by sulfurization at temperatures ranging from 500 ℃ to 900 ℃. Various microscopic analyses confirmed that the different sulfurization treatments altered the nanostructure of the MoS2 layers. Nanostructure alterations and enhanced crystallinity were observed at temperatures exceeding 800 ℃. The electrical properties of field-effect transistor devices fabricated from the MoS2 layers were investigated in relation to sulfurization temperature. The field-effect mobility of the MoS2 layers significantly increased with rising sulfurization temperature. The change in nanostructure and the transition to a horizontally aligned microstructure at temperatures over 800 ℃ were explicitly correlated with the change in field-effect mobility.