골드 나노 크리스탈을 증착한 n-형 옥사이드(IGZO) 전계 효과 트랜지스터를 이용한 암 검출 센서에 대한 연구

Abstract

최근 인간을 죽음에 이르게 하는 치명적인 질병인 암을 조기에 저렴하고 쉽게 발견하기 위한 혈중 암세포 검지센서에 대한 연구가 활발히 진행되고 있다. 따라서 본 연구에서는 n-type의 특성을 갖는 oxide material인 amorphous Indium-Gallium-Zinc-Oxide(a-IGZO)를 이용해 bottom gate로 동작하는 amorphous IGZO thin-film-transistor를 제작하고 제작된 소자의 상부에 Au nanoparticles를 deposition하고 8-Mercaptooctanioic acid linker와 guard-ring을 부착해 혈중 암세포 검지센서를 제작했다. 또한, 제작된 소자에 암 세포 중 breast cancer cell MDA-MB 231을 drop해 소자 문턱전압의 이동을 관찰했고 이를 통해 제작된 소자가 암 세포를 검지하는 소자임을 증명하였다. 소자를 제작하는 과정에서 각 단계별로 변화하는 문턱전압과 I-V 특성에 대해 고찰하였으며, 본 센서소자를 이용한 암 세포 검지 실험을 통해 암 세포 농도가 증가함에 따라 문턱전압의 변화율도 커지는 것을 알 수 있었다. 마지막으로 이러한 문턱전압의 변화를 이용해 암 세포 한 개가 가지는 charge를 계산하였다. |Recently, in accordance with the rapid growth of interest in health, cancer have emerged as a critical and significant disease that kills people. Therefore, the detection of cancer cells have been actively studied for many years since it can help people to detect a cancer in early stages. Thus, in this study, amorphous In-Ga-Zn-Oxide (IGZO) thin-film-transistors (TFTs) operated by bottom gate bias was used for detecting the cancer stem cells. For detecting the cancer cells, extra process was needed. On the IGZO TFT, gold nanoparticles are deposited and 8-Mercaptooctanioic acid linker and guard-ring was attached on it. After that process, by dropping breast cancer cell MDA-MB 231, we measured the threshold voltage which was changed step by step and proved the device can detect cancer stem cells as a sensor. In the device process, we thought why threshold voltage shift was occurred and why I-V characteristics was changed. And finally, we calculated the charge of one cancer cell, by splitting concentration of cancer stem cells.; Recently, in accordance with the rapid growth of interest in health, cancer have emerged as a critical and significant disease that kills people. Therefore, the detection of cancer cells have been actively studied for many years since it can help people to detect a cancer in early stages. Thus, in this study, amorphous In-Ga-Zn-Oxide (IGZO) thin-film-transistors (TFTs) operated by bottom gate bias was used for detecting the cancer stem cells. For detecting the cancer cells, extra process was needed. On the IGZO TFT, gold nanoparticles are deposited and 8-Mercaptooctanioic acid linker and guard-ring was attached on it. After that process, by dropping breast cancer cell MDA-MB 231, we measured the threshold voltage which was changed step by step and proved the device can detect cancer stem cells as a sensor. In the device process, we thought why threshold voltage shift was occurred and why I-V characteristics was changed. And finally, we calculated the charge of one cancer cell, by splitting concentration of cancer stem cells.