Full metadata record
DC Field | Value | Language |
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dc.contributor.author | 이화성 | - |
dc.date.accessioned | 2020-02-11T05:44:14Z | - |
dc.date.available | 2020-02-11T05:44:14Z | - |
dc.date.issued | 2019-02 | - |
dc.identifier.citation | ACS Applied Materials & Interfaces, v. 11, No. 10, Page. 10108-10117 | en_US |
dc.identifier.issn | 1944-8244 | - |
dc.identifier.uri | https://pubs.acs.org/doi/10.1021/acsami.9b01658 | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/123995 | - |
dc.description.abstract | The introduction of an appropriate functionality on the electrode/active layer interface has been found to be an efficient methodology to enhance the electrical performances of organic field-effect transistors (OFETs). Herein, we efficiently optimized the charge injection/extraction characteristics of source/drain (S/D) electrodes by applying an asymmetric functionalization at each individual electrode/organic semiconductor (OSC) interface. To further clarify the functionalizing effects of the electrode/OSC interface, we systematically designed five different OFETs: one with pristine S/D electrodes (denoted as pristine S/D) and the remaining ones made by symmetrically or asymmetrically functionalizing the S/D electrodes with up to two different self-assembled monolayers (SAMs) based on thiolated molecules, the strongly electron-donating thiophenol (TP) and electron-withdrawing 2,3,4,5-pentafluorobenzenethiol (PFBT). Both the S and D electrodes were functionalized with TP (denoted as TP-S/D) in one of the two symmetric cases and with PFBT in the other (PFBT-S/D). In each of the two asymmetric cases, one of the S/D electrodes was functionalized with TP and the other with PFBT (to produce PFBT-S/TP-D and TP-S/PFBT-D OFETs). The vapor-deposited p-type dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene was used as the OSC active layer. The PFBT-S/TP-D case exhibited a field-effect mobility (μFET) of 0.86 ± 0.23 cm2 V–1 s–1, about three times better than that of the pristine S/D case (0.31 ± 0.12 cm2 V–1 s–1). On the other hand, the μFET of the TP-S/PFBT-D case (0.18 ± 0.10 cm2 V–1 s–1) was significantly lower than that of the pristine case and even lower than those of the TP-S/D (0.23 ± 0.07 cm2 V–1 s–1) and PFBT-S/D (0.58 ± 0.19 cm2 V–1 s–1) cases. These results were clearly correlated with the additional hole density, surface potential, and effective work function. In addition, the contact resistance (RC) for the asymmetric PFBT-S/TP-D case was 10-fold less than that for the TP-S/PFBT-D case and more than five times lower than that for the pristine case. The results contribute a meaningful step forward in improving the electrical performances of various organic electronics such as OFETs, inverters, solar cells, and sensors. | en_US |
dc.description.sponsorship | This work was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (NRF2016R1D1A1B03936094 and NRF-2017R1A1A1A05001233). | en_US |
dc.language.iso | en_US | en_US |
dc.publisher | American Chemical Society | en_US |
dc.subject | charge injection | en_US |
dc.subject | charge extraction | en_US |
dc.subject | asymmetric functionalization | en_US |
dc.subject | self-assembled monolayer | en_US |
dc.subject | field-effect transistor | en_US |
dc.subject | contact resistance | en_US |
dc.title | Engineering Asymmetric Charge Injection/Extraction to Optimize Organic Transistor Performances | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1021/acsami.9b01658 | - |
dc.relation.journal | ACS APPLIED MATERIALS & INTERFACES | - |
dc.contributor.googleauthor | Rockson, Tonnah Kwesi | - |
dc.contributor.googleauthor | Baek, Seolhee | - |
dc.contributor.googleauthor | Jang, Hayeong | - |
dc.contributor.googleauthor | Choi, Giheon | - |
dc.contributor.googleauthor | Oh, Seungtaek | - |
dc.contributor.googleauthor | Kim, Jaehan | - |
dc.contributor.googleauthor | Cho, Hyewon | - |
dc.contributor.googleauthor | Kim, Se Hyun | - |
dc.contributor.googleauthor | Lee, Hwa Sung | - |
dc.relation.code | 2019002549 | - |
dc.sector.campus | E | - |
dc.sector.daehak | COLLEGE OF ENGINEERING SCIENCES[E] | - |
dc.sector.department | DEPARTMENT OF MATERIALS SCIENCE AND CHEMICAL ENGINEERING | - |
dc.identifier.pid | lmars | - |
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