Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 안지훈 | - |
dc.date.accessioned | 2020-01-07T02:08:19Z | - |
dc.date.available | 2020-01-07T02:08:19Z | - |
dc.date.issued | 2017-02 | - |
dc.identifier.citation | ADVANCED ELECTRONIC MATERIALS, v. 3, No. 2, Article no. 1600375 | en_US |
dc.identifier.issn | 2199-160X | - |
dc.identifier.uri | https://onlinelibrary.wiley.com/doi/full/10.1002/aelm.201600375 | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/121592 | - |
dc.description.abstract | Different growth mechanisms of van der Waals heteroepitaxial 2D Bi2Te3/Sb2Te3 stacking by choosing different substrates are reported. Sequential Bi2Te3/Sb2Te3 stacking growth mode becomes layer-by-layer growth on h-BN substrates, and 3D island growth on SiO2/Si. Compressive strain in the h-BN substrates imposed by the lattice mismatch plays a crucial role to determine different growth modes in these 2D nucleation kinetics models. | en_US |
dc.description.sponsorship | This work was supported by Institute for Basic Science (IBS), Korea under the Project Code (IBS-R014-G1-2016-a00). P. K. acknowledges support from AFOSR (FA9550-14-1-0268). | en_US |
dc.language.iso | en_US | en_US |
dc.publisher | WILEY-BLACKWELL | en_US |
dc.title | Frank–van der Merwe Growth versus Volmer–Weber Growth in Successive Stacking of a Few-Layer Bi2Te3/Sb2Te3 by van der Waals Heteroepitaxy: The Critical Roles of Finite Lattice-Mismatch with Seed Substrates | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1002/aelm.201600375 | - |
dc.relation.journal | ADVANCED ELECTRONIC MATERIALS | - |
dc.contributor.googleauthor | Heo, Hoseok | - |
dc.contributor.googleauthor | Sung, Ji Ho | - |
dc.contributor.googleauthor | Ahn, Ji-Hoon | - |
dc.contributor.googleauthor | Ghahari, Fereshte | - |
dc.contributor.googleauthor | Taniguchi, Takashi | - |
dc.contributor.googleauthor | Watanabe, Kenji | - |
dc.contributor.googleauthor | Kim, Philip | - |
dc.contributor.googleauthor | Jo, Moon-Ho | - |
dc.relation.code | 2017010713 | - |
dc.sector.campus | E | - |
dc.sector.daehak | COLLEGE OF ENGINEERING SCIENCES[E] | - |
dc.sector.department | DEPARTMENT OF MATERIALS SCIENCE AND CHEMICAL ENGINEERING | - |
dc.identifier.pid | ajh1820 | - |
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