Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Bukhvalov Danil | - |
dc.date.accessioned | 2019-12-09T16:27:08Z | - |
dc.date.available | 2019-12-09T16:27:08Z | - |
dc.date.issued | 2018-10 | - |
dc.identifier.citation | THIN SOLID FILMS, v. 665, page. 99-108 | en_US |
dc.identifier.issn | 0040-6090 | - |
dc.identifier.uri | https://www.sciencedirect.com/science/article/pii/S004060901830587X?via%3Dihub | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/120230 | - |
dc.description.abstract | The results of X-ray photoemission (XPS) and valence bands spectroscopy, optically stimulated electron emission (OSEE) measurements and density functional theory based modeling of graphene oxide (GO) placed on Cu via an electrophoretic deposition (EPD) are reported. The comparison of XPS spectra of EPD prepared GO/Cu composites with those of as prepared GO, strongly reduced GO, pure and oxidized copper demonstrate the partial (until C/O ratio about two) removal of oxygen-containing functional groups from GO simultaneously with the formation of copper oxide-like layers over the metallic substrate. OSEE measurements evidence the presence of copper oxide phase in the systems simultaneously with the absence of contributions from GO with corresponding energy gap. All measurements demonstrate the similarity of the results for different thickness of GO cover of the copper surface. Theoretical modeling demonstrates favorability of migration of oxygen-containing functional groups from GO to the copper substrate only for the case of C/O ratio below two and formation of Cu-O-C bonds between substrate and GO simultaneously with the vanishing of the energy gap in GO layer. Basing on results of experimental measurements and theoretical calculations we suggest the model of atomic structure for Cu/GO interface as Cu/CuO/GO with C/O ratio in gapless GO about two. | en_US |
dc.description.sponsorship | The authors would like to acknowledge the FEI Company for the SEM characterization of GO coatings. XPS measurements were supported by the Russian Foundation for Basic Research (Project 17-0200005), FASO (theme "Electron" No AAAA-A18-118020190098-5) and Government of Russian Federation (Act 211, agreement. 02.A03.21.0006). D. W. B. acknowledge support from the Ministry of Education and Science of the Russian Federation, Project No3.7372.2017. This research was also funded by Rector's Grant in the field of research & development (Silesian University of Technology; grant No. 04/010/RGJ17/0050). | en_US |
dc.language.iso | en_US | en_US |
dc.publisher | ELSEVIER SCIENCE SA | en_US |
dc.subject | Graphene | en_US |
dc.subject | Graphene oxide | en_US |
dc.subject | Reduced graphene oxide | en_US |
dc.subject | Density functional Theory | en_US |
dc.subject | X-ray photoelectron spectroscopy | en_US |
dc.subject | Conductivity | en_US |
dc.title | Atomic and electronic structure of graphene oxide/Cu interface | en_US |
dc.type | Article | en_US |
dc.relation.volume | 665 | - |
dc.identifier.doi | 10.1016/j.tsf.2018.09.002 | - |
dc.relation.page | 99-108 | - |
dc.relation.journal | THIN SOLID FILMS | - |
dc.contributor.googleauthor | Boukhvalov, Danil W. | - |
dc.contributor.googleauthor | Kurmaev, Ernst Z. | - |
dc.contributor.googleauthor | Urbanczyk, Ewelina | - |
dc.contributor.googleauthor | Dercz, Grzegorz | - |
dc.contributor.googleauthor | Stolarczyk, Agnieszka | - |
dc.contributor.googleauthor | Simka, Wojciech | - |
dc.contributor.googleauthor | Kukharenko, Andrey I. | - |
dc.contributor.googleauthor | Zhidkov, Ivan S. | - |
dc.contributor.googleauthor | Slesarev, Anatoly I. | - |
dc.contributor.googleauthor | Zatsepin, Anatoly F. | - |
dc.relation.code | 2018003110 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF NATURAL SCIENCES[S] | - |
dc.sector.department | DEPARTMENT OF CHEMISTRY | - |
dc.identifier.pid | danil | - |
dc.identifier.orcid | https://orcid.org/0000-0002-2286-3443 | - |
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