Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 정두석 | - |
dc.date.accessioned | 2019-12-09T02:03:10Z | - |
dc.date.available | 2019-12-09T02:03:10Z | - |
dc.date.issued | 2018-09 | - |
dc.identifier.citation | NANOTECHNOLOGY, v. 29, no. 45, Article no. 455202 | en_US |
dc.identifier.issn | 0957-4484 | - |
dc.identifier.issn | 1361-6528 | - |
dc.identifier.uri | https://iopscience.iop.org/article/10.1088/1361-6528/aaddbc | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/120004 | - |
dc.description.abstract | Rutile TiO2, a high temperature phase, has attracted interest as a capacitor dielectric in dynamic random-access memories (DRAMs). Despite its high dielectric constant of >80, large leakage currents caused by a low Schottky barrier height at the TiO2/electrode interface have hindered the use of rutile TiO2 as a commercial DRAM capacitor. Here, we propose a new Ru-Pt alloy electrode to increase the height of the Schottky barrier. The Ru-Pt mixed layer was grown by atomic layer deposition. The atomic ratio of Ru/Pt varied in the entire range from 100 at.% Ru to 100 at.% Pt. Rutile TiO(2)films were inductively formed only on the Ru-Pt layer containing <= 43 at.% Pt, while anatase TiO2 films with a relatively low dielectric constant (similar to 40) were formed at Pt compositions > 63 at.%. The Ru-Pt (40-50 at.%) layer also attained an increase in work function of similar to 0.3-0.4 eV, leading to an improvement in the leakage currents of the TiO2/Ru-Pt capacitor. These findings suggested that a Ru-Pt layer could serve as a promising electrode for next-generation DRAM capacitors. | en_US |
dc.description.sponsorship | This work was supported by the Future Semiconductor Device Technology Development Program (10047231) funded by MOTIE (Ministry of Trade, Industry & Energy) and KSRC (Korea Semiconductor Research Consortium); and by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIT) (NRF-2018R1A2B2007525). | en_US |
dc.language.iso | en_US | en_US |
dc.publisher | IOP PUBLISHING LTD | en_US |
dc.subject | DRAM | en_US |
dc.subject | capacitor | en_US |
dc.subject | Ru-Pt electrode | en_US |
dc.subject | rutile TiO2 | en_US |
dc.title | A Ru-Pt alloy electrode to suppress leakage currents of dynamic random-access memory capacitors | en_US |
dc.type | Article | en_US |
dc.relation.no | 45 | - |
dc.relation.volume | 29 | - |
dc.identifier.doi | 10.1088/1361-6528/aaddbc | - |
dc.relation.page | 455202-455202 | - |
dc.relation.journal | NANOTECHNOLOGY | - |
dc.contributor.googleauthor | Pyeon, Jung Joon | - |
dc.contributor.googleauthor | Cho, Cheol Jin | - |
dc.contributor.googleauthor | Jeong, Doo Seok | - |
dc.contributor.googleauthor | Kim, Jin-Sang | - |
dc.contributor.googleauthor | Kang, Chong-Yun | - |
dc.contributor.googleauthor | Kim, Seong Keun | - |
dc.relation.code | 2018001258 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DIVISION OF MATERIALS SCIENCE AND ENGINEERING | - |
dc.identifier.pid | dooseokj | - |
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