Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 전형탁 | - |
dc.date.accessioned | 2019-12-09T01:22:03Z | - |
dc.date.available | 2019-12-09T01:22:03Z | - |
dc.date.issued | 2018-09 | - |
dc.identifier.citation | JOURNAL OF APPLIED PHYSICS, v. 124, no. 11, Article no. 115301 | en_US |
dc.identifier.issn | 0021-8979 | - |
dc.identifier.issn | 1089-7550 | - |
dc.identifier.uri | https://aip.scitation.org/doi/10.1063/1.5037500 | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/119985 | - |
dc.description.abstract | We theoretically study the H2S adsorption process on (0001) alpha-quartz SiO2 surfaces, which is the preconditioning process for the atomic layer deposition growth of metal sulfide materials. The surface structures of dense and fully hydroxylated (0001) alpha-quartz SiO2 are energetically stable, but their reaction with a H2S molecule is not so active, whereas the cleaved SiO2 surface is chemically reactive to the dissociative adsorption of a H2S molecule with an adsorption energy of -3.08 eV/molecule. On the cleaved surface, we confirm that adsorbed H2S is dissociated into H and H-S fragments, and the energy barrier in this reaction process is computed as 0.042 eV. | en_US |
dc.description.sponsorship | This research was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT and future Planning (Nos. 2009-0093818, NRF-2014M3A7B4049367, NRF-2017R1D1A1B03030356). | en_US |
dc.language.iso | en_US | en_US |
dc.publisher | AMER INST PHYSICS | en_US |
dc.subject | ATOMIC LAYER DEPOSITION | en_US |
dc.subject | HYDROGEN-SULFIDE | en_US |
dc.subject | MECHANISM | en_US |
dc.subject | MOS2 | en_US |
dc.subject | CARBON | en_US |
dc.title | H2S adsorption process on (0001) alpha-quartz SiO2 surfaces | en_US |
dc.type | Article | en_US |
dc.relation.no | 11 | - |
dc.relation.volume | 124 | - |
dc.identifier.doi | 10.1063/1.5037500 | - |
dc.relation.page | 1-6 | - |
dc.relation.journal | JOURNAL OF APPLIED PHYSICS | - |
dc.contributor.googleauthor | Kim, Hye Jung | - |
dc.contributor.googleauthor | Jeon, Hyeongtag | - |
dc.contributor.googleauthor | Shin, Young-Han | - |
dc.relation.code | 2018003651 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DIVISION OF MATERIALS SCIENCE AND ENGINEERING | - |
dc.identifier.pid | hjeon | - |
dc.identifier.researcherID | P-3193-2015 | - |
dc.identifier.orcid | http://orcid.org/0000-0003-2502-7413 | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.