Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 박재근 | - |
dc.date.accessioned | 2019-12-08T20:45:57Z | - |
dc.date.available | 2019-12-08T20:45:57Z | - |
dc.date.issued | 2018-09 | - |
dc.identifier.citation | JOURNAL OF PHYSICS D-APPLIED PHYSICS, v. 51, no. 50, Article no. 504002 | en_US |
dc.identifier.issn | 0022-3727 | - |
dc.identifier.issn | 1361-6463 | - |
dc.identifier.uri | https://iopscience.iop.org/article/10.1088/1361-6463/aad592 | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/119963 | - |
dc.description.abstract | A two-terminal perpendicular spin-transfer torque (p-STT) based neuron with a 100 x 100 nm device size was fabricated with a p-STT magnetic tunneling junction (MTJ) spin valve. It performed well in the integrate-and-fire event of the input voltage pulse (spike) cycles, which originate from the imperfect structure of the MgO tunneling barrier in a p-STT MTJ spin valve (i.e. a nano-scale poly-grain size distribution of the MgO tunneling barrier). In particular, the integrate-and-fire cycles rapidly increase as the input voltage pulse (spike) amplitude, width, and external assistant perpendicular magnetic field decrease. | en_US |
dc.description.sponsorship | This work was supported by a Basic Science Research Program grant from the National Research Foundation of Korea (NRF) funded by the Korean government (MSIP) (No. 2017R1A2A1A05001285), the Nano-Material Technology Development Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT and Future Planning (grant number. 2016910249), and the Brain Korea 21 PLUS Program in 2014. | en_US |
dc.language.iso | en_US | en_US |
dc.publisher | IOP PUBLISHING LTD | en_US |
dc.subject | p-STT MTJ | en_US |
dc.subject | p-STT neuron | en_US |
dc.subject | integrate-and-fire | en_US |
dc.title | A two-terminal perpendicular spin-transfer torque based artificial neuron | en_US |
dc.type | Article | en_US |
dc.relation.no | 50 | - |
dc.relation.volume | 51 | - |
dc.identifier.doi | 10.1088/1361-6463/aad592 | - |
dc.relation.page | 504002-504002 | - |
dc.relation.journal | JOURNAL OF PHYSICS D-APPLIED PHYSICS | - |
dc.contributor.googleauthor | Kondo, Kei | - |
dc.contributor.googleauthor | Choi, Jin-Young | - |
dc.contributor.googleauthor | Baek, Jong-Ung | - |
dc.contributor.googleauthor | Jun, Han-Sol | - |
dc.contributor.googleauthor | Jung, Sunhwa | - |
dc.contributor.googleauthor | Shim, Tae-Hun | - |
dc.contributor.googleauthor | Park, Jea-Gun | - |
dc.relation.code | 2018003213 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DEPARTMENT OF ELECTRONIC ENGINEERING | - |
dc.identifier.pid | parkjgl | - |
dc.identifier.orcid | https://orcid.org/0000-0002-5831-2854 | - |
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