Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 박인성 | - |
dc.date.accessioned | 2019-12-08T18:55:51Z | - |
dc.date.available | 2019-12-08T18:55:51Z | - |
dc.date.issued | 2018-08 | - |
dc.identifier.citation | ADVANCED MATERIALS, v. 30, no. 39, Article no. 1802025 | en_US |
dc.identifier.issn | 0935-9648 | - |
dc.identifier.issn | 1521-4095 | - |
dc.identifier.uri | https://onlinelibrary.wiley.com/doi/abs/10.1002/adma.201802025 | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/119674 | - |
dc.description.abstract | A surge in interest of oxide-based materials is testimony for their potential utility in a wide array of device applications and offers a fascinating landscape for tuning the functional properties through a variety of physical and chemical parameters. In particular, selective electronic/defect doping has been demonstrated to be vital in tailoring novel functionalities, not existing in the bulk host oxides. Here, an extraordinary interstitial doping effect is demonstrated centered around a light element, boron (B). The host matrix is a novel composite system, made from discrete bulk LaAlO3:LaBO3 compounds. The findings show a spontaneous ordering of the interstitial B cations within the host LaAlO3 lattices, and subsequent spin-polarized charge injection into the neighboring cations. This leads to a series of remarkable cation-dominated electrical switching and high-temperature ferromagnetism. Hence, the induced interstitial doping serves to transform a nonmagnetic insulating bulk oxide into a ferromagnetic ionic-electronic conductor. This unique interstitial B doping effect upon its control is proposed to be as a general route for extracting/modifying multifunctional properties in bulk oxides utilized in energy and spin-based applications. | en_US |
dc.description.sponsorship | The authors acknowledge the financial support from the DFG through Sonderforschungsbereiche 762 (Grant No. A12). This work was partially supported by the Bundesministerium fur Bildung und Forschung fund (Grant No. 03Z22HN12). Prof. S. Ebbinghaus in the Institut fur Chemie, Martin-Luther-Universitat Halle-Wittenberg and Prof. M. Alexe in the department of Physics, University of Warwick are thanked for technical support for this work. A.J.M. acknowledges the support from the Winton Programme for the Physics of Sustainability. | en_US |
dc.language.iso | en_US | en_US |
dc.publisher | WILEY-V C H VERLAG GMBH | en_US |
dc.subject | first-principle calculations | en_US |
dc.subject | light element interstitial doping | en_US |
dc.subject | oxide composites | en_US |
dc.subject | resistive switching | en_US |
dc.subject | Stoner ferromagnetism | en_US |
dc.title | Electromagnetic Functionalization of Wide‐Bandgap Dielectric Oxides by Boron Interstitial Doping | en_US |
dc.type | Article | en_US |
dc.relation.volume | 30 | - |
dc.identifier.doi | 10.1002/adma.201802025 | - |
dc.relation.page | 20251-20259 | - |
dc.relation.journal | ADVANCED MATERIALS | - |
dc.contributor.googleauthor | Park, Dae-Sung | - |
dc.contributor.googleauthor | Rees, Gregory J. | - |
dc.contributor.googleauthor | Wang, Haiyuan | - |
dc.contributor.googleauthor | Rata, Diana | - |
dc.contributor.googleauthor | Morris, Andrew J. | - |
dc.contributor.googleauthor | Maznichenko, Igor V. | - |
dc.contributor.googleauthor | Ostanin, Sergey | - |
dc.contributor.googleauthor | Bhatnagar, Akash | - |
dc.contributor.googleauthor | Choi, Chel-Jong | - |
dc.contributor.googleauthor | Park, In-Sung | - |
dc.relation.code | 2018003388 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DIVISION OF MATERIALS SCIENCE AND ENGINEERING | - |
dc.identifier.pid | parkis77 | - |
dc.identifier.researcherID | P-4497-2014 | - |
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