Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 최창환 | - |
dc.date.accessioned | 2019-12-08T18:21:56Z | - |
dc.date.available | 2019-12-08T18:21:56Z | - |
dc.date.issued | 2018-08 | - |
dc.identifier.citation | JOURNAL OF ALLOYS AND COMPOUNDS, v. 759, page. 44-51 | en_US |
dc.identifier.issn | 0925-8388 | - |
dc.identifier.issn | 1873-4669 | - |
dc.identifier.uri | https://www.sciencedirect.com/science/article/abs/pii/S0925838818317912?via%3Dihub | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/119626 | - |
dc.description.abstract | We have demonstrated the co-existence of reliable analog and digital switching characteristics with tantalum oxide based memristor by appropriate rapid thermal annealing (RTA). The device without RTA exhibits a digital SET and multilevel RESET for positive and negative sweeps, respectively. On the other hands, the device shows only analog switching characteristics such that current level increases and decreases gradually for successive positive and negative voltage sweeps, respectively, before any electroforming process with the RTA in the nitrogen ambient at the crystalline temperature of tantalum oxide which is 700 degrees C for 60 s. Once electroforming process is done, the device exhibits a reliable digital switching with SET at positive sweep and RESET at negative sweep voltages. In the analog state of the device we successfully emulate the synaptic characteristic of the device like spike-rate dependent plasticity (SRDP), pulse-paired facilitation (PPF) and post-tetanic potentiation (PTP). Finally, the Hermann Ebbinghaus forgetting curve is obtained from these devices. The conversion of the device from the digital SET and multilevel RESET to analogue switching is attributed to structural transition of amorphous tantalum oxide to polycrystalline tantalum oxide, different defect density and interface variation in the device. (C) 2018 Elsevier B.V. All rights reserved. | en_US |
dc.description.sponsorship | This research was supported by the Nano Material Technology Development Program through the National Research Foundation of Korea (NRF) funded by the Ministry of science, ICT & Future Planning. (NRF-2016M3A7B4910426) as well as by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (NRF-2016R1A6A1A03013422). | en_US |
dc.language.iso | en_US | en_US |
dc.publisher | ELSEVIER SCIENCE SA | en_US |
dc.subject | Rapid thermal annealing | en_US |
dc.subject | Multilevel RESET | en_US |
dc.subject | Analogue switching | en_US |
dc.subject | Pulse-paired facilitation | en_US |
dc.subject | Post-tetanic potentiation | en_US |
dc.subject | Hermann Ebbinghaus forgetting curve | en_US |
dc.title | Structural engineering of tantalum oxide based memristor and its electrical switching responses using rapid thermal annealing | en_US |
dc.type | Article | en_US |
dc.relation.volume | 759 | - |
dc.identifier.doi | 10.1016/j.jallcom.2018.05.106 | - |
dc.relation.page | 44-51 | - |
dc.relation.journal | JOURNAL OF ALLOYS AND COMPOUNDS | - |
dc.contributor.googleauthor | Abbas, Yawar | - |
dc.contributor.googleauthor | Sokolov, Andrey Sergeevich | - |
dc.contributor.googleauthor | Jeon, Yu-Rim | - |
dc.contributor.googleauthor | Kim, Sohyeon | - |
dc.contributor.googleauthor | Ku, Boncheol | - |
dc.contributor.googleauthor | Choi, Changhwan | - |
dc.relation.code | 2018003394 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DIVISION OF MATERIALS SCIENCE AND ENGINEERING | - |
dc.identifier.pid | cchoi | - |
dc.identifier.orcid | https://orcid.org/0000-0002-8386-3885 | - |
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