Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 정재경 | - |
dc.date.accessioned | 2019-12-08T12:31:43Z | - |
dc.date.available | 2019-12-08T12:31:43Z | - |
dc.date.issued | 2018-06 | - |
dc.identifier.citation | IEEE TRANSACTIONS ON ELECTRON DEVICES, v. 65, no. 6, page. 2492-2497 | en_US |
dc.identifier.issn | 0018-9383 | - |
dc.identifier.issn | 1557-9646 | - |
dc.identifier.uri | https://ieeexplore.ieee.org/document/8341848 | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/119236 | - |
dc.description.abstract | The self-heating effect (SHE) in top-gate In-Ga-Zn-O (IGZO) thin-film transistors (TFTs) was examined systematically using short electrical pulse measurement methods. The temperature dependence of the pulse measurements of IGZO TFTs revealed a significant increase in temperature during the measurements, suggesting that conventional measurements can overestimate the device performance significantly. The effective temperature was introduced and extracted for IGZO TFTs at various heating powers and ambient temperatures. The short sampling time was determined to be a key in characterizing the intrinsic device properties that are not influenced by the SHE. The cooling behavior after self-heatingwas also examined using multipulse measurements. Because heating and cooling are significant even in a very short time, it is essential to consider the operation condition of the devices when characterizing TFTs to estimate the precise performance and reliability in a real operation. | en_US |
dc.description.sponsorship | This work was supported in part by the Future Semiconductor Device Technology Development Program funded by the Ministry of Trade, Industry and Energy and Korea Semiconductor Research Consortium under Grant 10052804 and Grant 10067739, in part by the Nano Material Technology Development Program under Grant 2015M3A7B7045470, and in part by the Basic Science Research Program under Grant 2016R1D1A1B03933627 through the National Research Foundation of Korea funded by the Ministry of Science and ICT. | en_US |
dc.language.iso | en_US | en_US |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | en_US |
dc.subject | Effective temperature | en_US |
dc.subject | fast current-voltage (I-V) | en_US |
dc.subject | fast transient | en_US |
dc.subject | heat dissipation | en_US |
dc.subject | In-Ga-Zn-O (IGZO) | en_US |
dc.subject | metal-oxide-semiconductor | en_US |
dc.subject | pulse I-V | en_US |
dc.subject | self-aligned | en_US |
dc.subject | self-heat effect | en_US |
dc.subject | single pulse | en_US |
dc.subject | thin-film transistor | en_US |
dc.subject | top gate | en_US |
dc.subject | waveform capture | en_US |
dc.title | Electrical Characterization of the Self-Heating Effect in Oxide Semiconductor Thin-Film Transistors Using Pulse-Based Measurements | en_US |
dc.type | Article | en_US |
dc.relation.no | 6 | - |
dc.relation.volume | 65 | - |
dc.identifier.doi | 10.1109/TED.2018.2826072 | - |
dc.relation.page | 2492-2497 | - |
dc.relation.journal | IEEE TRANSACTIONS ON ELECTRON DEVICES | - |
dc.contributor.googleauthor | Manh-Cuong Nguyen | - |
dc.contributor.googleauthor | On, Nuri | - |
dc.contributor.googleauthor | Ji, Hyungmin | - |
dc.contributor.googleauthor | An Hoang-Thuy Nguyen | - |
dc.contributor.googleauthor | Choi, Sujin | - |
dc.contributor.googleauthor | Cheon, Jonggyu | - |
dc.contributor.googleauthor | Yu, Kyoung-Moon | - |
dc.contributor.googleauthor | Cho, Seong-Yong | - |
dc.contributor.googleauthor | Kim, JinHyun | - |
dc.contributor.googleauthor | Jeong, Jaekyeong | - |
dc.relation.code | 2018003012 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DEPARTMENT OF ELECTRONIC ENGINEERING | - |
dc.identifier.pid | jkjeong1 | - |
dc.identifier.orcid | https://orcid.org/0000-0003-3857-1039 | - |
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