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dc.contributor.author최병덕-
dc.date.accessioned2019-12-08T11:38:38Z-
dc.date.available2019-12-08T11:38:38Z-
dc.date.issued2018-06-
dc.identifier.citationIEEE TRANSACTIONS ON ELECTRON DEVICES, v. 65, no. 8, page. 3269-3276en_US
dc.identifier.issn0018-9383-
dc.identifier.issn1557-9646-
dc.identifier.urihttps://ieeexplore.ieee.org/document/8388719-
dc.identifier.urihttps://repository.hanyang.ac.kr/handle/20.500.11754/119162-
dc.description.abstractMost thin-film transistor (TFT) gate drivers integrated on the display panel use the carry signals between the stages. In our previous works, we found that these carry-type gate drivers are subject to the reliability problem in a flexible display, since the errors of the stressed stages are accumulated through the carry signals. This problem possibly leads to the failure of image refresh of the display device. Therefore, the carry-free gate driver can resolve the error accumulation problem since it does not use the carry signals and instead, each unit stage operates independently. In this paper, we propose an advanced carry-free gate driver circuit to remove the drawbacks of the previous version, while keeping the advantages. More importantly, this paper is the first report to experimentally show that the error accumulation phenomenon of the carry-type gate driver and the problem is removed in the carry-free gate driver. The proposed carry-free gate driver and the carry-type gate driver are fabricated with amorphous indium-gallium-zinc-oxide TFTs on a flexible substrate for comparison purpose. The proposed gate driver shows a very high reliability since no voltage fluctuation occurs at the outputs after 10 000 cycles bending test with 2-mm bending radius.en_US
dc.description.sponsorshipThis work was supported by the Ministry of Trade, Industry & Energy (MOTIE, 10052020) and Korea Display Research Corporation Support Program for the development of future devices technology for display industry. The review of this paper was arranged by Editor X. Guo.en_US
dc.language.isoen_USen_US
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INCen_US
dc.subjectAmorphous indium-gallium-zinc oxide thin-film transistor (a-IGZO TFT)en_US
dc.subjectcarry-free gate driveren_US
dc.subjectdecoderen_US
dc.subjectgate driveren_US
dc.titleA High-Reliability Carry-Free Gate Driver for Flexible Displays Using a-IGZO TFTsen_US
dc.typeArticleen_US
dc.relation.no8-
dc.relation.volume65-
dc.identifier.doi10.1109/TED.2018.2843180-
dc.relation.page3269-3276-
dc.relation.journalIEEE TRANSACTIONS ON ELECTRON DEVICES-
dc.contributor.googleauthorKim, Jong-Seok-
dc.contributor.googleauthorByun, Jung-Woo-
dc.contributor.googleauthorJang, Jun-Hwan-
dc.contributor.googleauthorKim, Yong-Duck-
dc.contributor.googleauthorHan, Ki-Lim-
dc.contributor.googleauthorPark, Jin-Seong-
dc.contributor.googleauthorChoi, Byong-Deok-
dc.relation.code2018003012-
dc.sector.campusS-
dc.sector.daehakCOLLEGE OF ENGINEERING[S]-
dc.sector.departmentDEPARTMENT OF ELECTRONIC ENGINEERING-
dc.identifier.pidbdchoi-
dc.identifier.orcidhttps://orcid.org/0000-0002-9283-8243-
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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