Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 정재경 | - |
dc.date.accessioned | 2019-12-08T05:35:59Z | - |
dc.date.available | 2019-12-08T05:35:59Z | - |
dc.date.issued | 2018-05 | - |
dc.identifier.citation | IEEE ELECTRON DEVICE LETTERS, v. 39, no. 5, page. 688-691 | en_US |
dc.identifier.issn | 0741-3106 | - |
dc.identifier.issn | 1558-0563 | - |
dc.identifier.uri | https://ieeexplore.ieee.org/document/8307119 | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/118834 | - |
dc.description.abstract | This letter reports the fabrication of high-performance amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) via atomic layer deposition at a substrate temperature of 250 degrees C. The film thickness of In2O3, Ga2O3, and ZnO varied linearly with the number of deposition cycles. The cation composition of the IGZO film was controlledby an alternate stacking of In2O3, Ga2O3, and ZnO atomic layers. The fabricated a-IGZO TFTs exhibited a high electron mobility of 22.1 cm(2)/Vs, threshold voltage of 2.41 V, subthreshold gate swing of 0.30 V/decade, and an I-ON/(OFF) ratio of > 1 x 10(8). | en_US |
dc.description.sponsorship | This study was supported by the LG Display Company. The review of this letter was arranged by Editor W. S. Wong. | en_US |
dc.language.iso | en_US | en_US |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | en_US |
dc.subject | Atomic layer deposition | en_US |
dc.subject | high mobility | en_US |
dc.subject | a-IGZO | en_US |
dc.subject | high performance | en_US |
dc.subject | thin-film transistors | en_US |
dc.title | High-Performance Amorphous Indium Gallium Zinc Oxide Thin-Film Transistors Fabricated by Atomic Layer Deposition | en_US |
dc.type | Article | en_US |
dc.relation.no | 5 | - |
dc.relation.volume | 39 | - |
dc.identifier.doi | 10.1109/LED.2018.2812870 | - |
dc.relation.page | 688-691 | - |
dc.relation.journal | IEEE ELECTRON DEVICE LETTERS | - |
dc.contributor.googleauthor | Cho, Min Hoe | - |
dc.contributor.googleauthor | Seol, Hyunju | - |
dc.contributor.googleauthor | Yang, Hoichang | - |
dc.contributor.googleauthor | Yun, Pil Sang | - |
dc.contributor.googleauthor | Bae, Jong Uk | - |
dc.contributor.googleauthor | Park, Kwon-Shik | - |
dc.contributor.googleauthor | Jeong, Jae Kyeong | - |
dc.relation.code | 2018000192 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DEPARTMENT OF ELECTRONIC ENGINEERING | - |
dc.identifier.pid | jkjeong1 | - |
dc.identifier.orcid | http://orcid.org/0000-0003-3857-1039 | - |
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