Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 소홍윤 | - |
dc.date.accessioned | 2019-12-07T23:57:39Z | - |
dc.date.available | 2019-12-07T23:57:39Z | - |
dc.date.issued | 2018-05 | - |
dc.identifier.citation | ADVANCED FUNCTIONAL MATERIALS, v. 28, no. 22, Article no. 1705823 | en_US |
dc.identifier.issn | 1616-301X | - |
dc.identifier.issn | 1616-3028 | - |
dc.identifier.uri | https://onlinelibrary.wiley.com/doi/abs/10.1002/adfm.201705823 | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/118557 | - |
dc.description.abstract | Progress in wide bandgap, III-V material systems based on gallium nitride (GaN) has enabled the realization of high-power and high-frequency electronics. Since the highly conductive, 2D electron gas (2DEG) at the aluminum gallium nitride (AlGaN)/GaN interface is based on built-in polarization fields and is confined to nanoscale thicknesses, its charge carriers exhibit much higher mobilities compared to their doped counterparts. This study shows that such 2DEGs also offer the unique ability to manipulate electrical transport separately from thermal transport, through the examination of fully suspended AlGaN/GaN diaphragms of varied GaN buffer layer thickness. Notably, approximate to 100 nm thin GaN layers can considerably impede heat flow without electrical transport degradation. These achieve 4x improvement in the thermoelectric figure of merit (zT) over externally doped GaN, with state-of-the-art power factors of 4-7 mW m(-1) K-2. The remarkable tuning behavior and thermoelectric enhancement, elucidated here for the first time in a polarization-based heterostructure, are achieved because electrons are at the heterostructured interface, while phonons are within the material system. These results highlight the potential for using 2DEGs in III-V materials for on-chip thermal sensing and energy harvesting. | en_US |
dc.description.sponsorship | This work was supported in part by the National Science Foundation (NSF) Engineering Research Center for Power Optimization of Electro Thermal Systems (POETS) under Grant EEC-1449548, by the NSF DMREF grant 1534279, and by the research fund of Hanyang University (HY-2017). The MOCVD experiments were conducted at the MOCVD Lab of the Stanford Nanofabrication Facility (SNF), which was partly supported by the NSF as part of the National Nanotechnology Coordinated Infrastructure (NNCI) under award ECCS-1542152. The authors thank Caitlin Chapin, Hannah Alpert, and Karen Dowling for assistance with fabrication. The authors also thank Karen Dowling and Hannah Alpert for assistance with Hall measurements, and Thomas Heuser for assistance with the XRD measurements. The authors also acknowledge Prof. Andrew Alleyne and Pamela Tannous for useful discussions. | en_US |
dc.language.iso | en_US | en_US |
dc.publisher | WILEY-V C H VERLAG GMBH | en_US |
dc.subject | 2DEG | en_US |
dc.subject | AlGaN/GaN | en_US |
dc.subject | polarization | en_US |
dc.subject | Seebeck coefficients | en_US |
dc.subject | thermal conductivity | en_US |
dc.title | Tuning Electrical and Thermal Transport in AlGaN/GaN Heterostructures via Buffer Layer Engineering | en_US |
dc.type | Article | en_US |
dc.relation.no | 22 | - |
dc.relation.volume | 28 | - |
dc.identifier.doi | 10.1002/adfm.201705823 | - |
dc.relation.page | 1-9 | - |
dc.relation.journal | ADVANCED FUNCTIONAL MATERIALS | - |
dc.contributor.googleauthor | Yalamarthy, Ananth Saran | - |
dc.contributor.googleauthor | So, Hongyun | - |
dc.contributor.googleauthor | Rojo, Miguel Munoz | - |
dc.contributor.googleauthor | Suria, Ateeq J. | - |
dc.contributor.googleauthor | Xu, Xiaoqing | - |
dc.contributor.googleauthor | Pop, Eric | - |
dc.contributor.googleauthor | Senesky, Debbie G. | - |
dc.relation.code | 2018001519 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DIVISION OF MECHANICAL ENGINEERING | - |
dc.identifier.pid | hyso | - |
dc.identifier.orcid | http://orcid.org/0000-0003-3870-388X | - |
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