Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 정재경 | - |
dc.date.accessioned | 2019-12-07T21:14:22Z | - |
dc.date.available | 2019-12-07T21:14:22Z | - |
dc.date.issued | 2018-04 | - |
dc.identifier.citation | IEEE TRANSACTIONS ON ELECTRON DEVICES, v. 65, no. 4, page. 1383-1390 | en_US |
dc.identifier.issn | 0018-9383 | - |
dc.identifier.issn | 1557-9646 | - |
dc.identifier.uri | https://ieeexplore.ieee.org/document/8305651 | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/118485 | - |
dc.description.abstract | A thermally stable Ca-doped CuOx (CuCaOx) diffusion barrier to prevent the migration of Cu to amorphous InGaZnO (a-IGZO) was developed by reactive sputtering and subsequent annealing. Insertion of a 5-nm-thick CaCuOx between the Ca-dopedCu (CuCa) and a-IGZO channel films in the source/drain contact regions provided the resulting transistors with superior charge transport and lower trap density compared to the diffusion barrier-free CuCa/a-IGZO transistors. The fabricated a-IGZO transistors with the CuCa/CuCaOx stack contact exhibited a high mobility of 20.8 cm(2)/V.s and an Ion/off ratio of 108. Simultaneously, very stable behavior against the external positive/negate gate bias stress was observed for the a-IGZO thin-film transistors with the CuCa/CuCaOx stack contact. This was attributed to suppression of Cu-related acceptor-like traps due to the conformal formation of CuCaOx film with excellent barrier properties. | en_US |
dc.description.sponsorship | This work was supported in part by the Industrial Strategic Technology Development Program funded by the Ministry of Knowledge Economy/Ministry of Energy, Industry and Trade under Grant 10048560 and in part by the National Research Foundation of Korea funded by the Korean Government under Grant NRF-2015R1A2A2A01003848. | en_US |
dc.language.iso | en_US | en_US |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | en_US |
dc.subject | Amorphous InGaZnO (a-IGZO) | en_US |
dc.subject | Cu-Ca alloy | en_US |
dc.subject | diffusion barrier | en_US |
dc.subject | high mobility | en_US |
dc.subject | stability | en_US |
dc.subject | thin-film transistors (TFTs) | en_US |
dc.title | Ca-Doped CuO Diffusion Barrier for High-Performance a-IGZO Transistors With Cu-Based Source/Drain Material | en_US |
dc.type | Article | en_US |
dc.relation.no | 4 | - |
dc.relation.volume | 65 | - |
dc.identifier.doi | 10.1109/TED.2018.2806362 | - |
dc.relation.page | 1383-1390 | - |
dc.relation.journal | IEEE TRANSACTIONS ON ELECTRON DEVICES | - |
dc.contributor.googleauthor | Lee, Chang Kyu | - |
dc.contributor.googleauthor | In, Da Young | - |
dc.contributor.googleauthor | Oh, Dong Ju | - |
dc.contributor.googleauthor | Lee, Sang Ho | - |
dc.contributor.googleauthor | Lee, Ji Won | - |
dc.contributor.googleauthor | Jeong, Jae Kyeong | - |
dc.relation.code | 2018003012 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DEPARTMENT OF ELECTRONIC ENGINEERING | - |
dc.identifier.pid | jkjeong1 | - |
dc.identifier.orcid | http://orcid.org/0000-0003-3857-1039 | - |
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