Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 최창환 | - |
dc.date.accessioned | 2019-12-06T06:05:18Z | - |
dc.date.available | 2019-12-06T06:05:18Z | - |
dc.date.issued | 2018-03 | - |
dc.identifier.citation | APPLIED SURFACE SCIENCE, v. 434, page. 822-830 | en_US |
dc.identifier.issn | 0169-4332 | - |
dc.identifier.issn | 1873-5584 | - |
dc.identifier.uri | https://www.sciencedirect.com/science/article/pii/S0169433217332397?via%3Dihub | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/117912 | - |
dc.description.abstract | We report a modulation of oxygen vacancies profile in atomic layer deposition (ALD) HfO2-x thin films by reducing oxidant pulse time (0.7 s-0.1 s) and study its effect on resistive switching behavior with a Ti/HfO2-x/Pt structure. Hf 4f spectra of x-ray photoelectron microscopy (XPS) and depth profile confirm varied oxygen vacancies profiles by shifts of binding energies of Hf 4f5/2 and Hf 4f7/2 main peaks and its according HfO2-x sub-oxides for each device. The ultraviolet photoelectron spectroscopy (UPS) confirms different electron affinity (chi) of HfO2 and HfO2-x thin films, implying that barrier height at Ti/oxide interface is reduced. Current transport mechanism is dictated by Ohmic conduction in fully oxidized HfO2 thin films - Device A (0.7 s) and by Trap Filled Space Charge Limited Conduction (TF-SCLC) in less oxidized HfO2-x thin films - Device B (0.3 s) and Device C (0.1 s). A switching mechanism related to the oxygen vacancies modulation in Ti/HfO2-x/Pt based resistive random access memory (RRAM) devices is used to explain carefully notified current transport mechanism variations from device-to-device. A proper endurance and long-time retention characteristics of the devices are also obtained. (c) 2017 Elsevier B.V. All rights reserved. | en_US |
dc.description.sponsorship | This research was supported by Nano Material Technology Development Program through the National Research Foundation of Korea (NRF) funded by the Ministry of science, ICT & Future Planning (NRF-2016M3A7B4910426) as well as by Future Semiconductor Device Technology Development Program (10044842) funded by MOTIE (Ministry of Trade, Industry & Energy) and KSRC (Korea Semiconductor Research Consortium). | en_US |
dc.language.iso | en_US | en_US |
dc.publisher | ELSEVIER SCIENCE BV | en_US |
dc.subject | Resistive switching | en_US |
dc.subject | RRAM | en_US |
dc.subject | Hafnium oxide | en_US |
dc.subject | ALD | en_US |
dc.subject | Oxygen vacancies | en_US |
dc.title | Influence of oxygen vacancies in ALD HfO2-x thin films on non-volatile resistive switching phenomena with a Ti/HfO2-x/Pt structure | en_US |
dc.type | Article | en_US |
dc.relation.volume | 434 | - |
dc.identifier.doi | 10.1016/j.apsusc.2017.11.016 | - |
dc.relation.page | 822-830 | - |
dc.relation.journal | APPLIED SURFACE SCIENCE | - |
dc.contributor.googleauthor | Sokolov, Andrey Sergeevich | - |
dc.contributor.googleauthor | Jeon, Yu-Rim | - |
dc.contributor.googleauthor | Kim, Sohyeon | - |
dc.contributor.googleauthor | Ku, Boncheol | - |
dc.contributor.googleauthor | Lim, Donghwan | - |
dc.contributor.googleauthor | Han, Hoonhee | - |
dc.contributor.googleauthor | Chae, Myeong Gyoon | - |
dc.contributor.googleauthor | Lee, Jaeho | - |
dc.contributor.googleauthor | Ha, Beom Gil | - |
dc.contributor.googleauthor | Choi, Changhwan | - |
dc.relation.code | 2018002021 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DIVISION OF MATERIALS SCIENCE AND ENGINEERING | - |
dc.identifier.pid | cchoi | - |
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