Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 안진호 | - |
dc.date.accessioned | 2019-12-06T00:29:50Z | - |
dc.date.available | 2019-12-06T00:29:50Z | - |
dc.date.issued | 2018-03 | - |
dc.identifier.citation | APPLIED SURFACE SCIENCE, v. 435, page. 117-121 | en_US |
dc.identifier.issn | 0169-4332 | - |
dc.identifier.issn | 1873-5584 | - |
dc.identifier.uri | https://www.sciencedirect.com/science/article/pii/S0169433217333433?via%3Dihub | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/117756 | - |
dc.description.abstract | The anode interface effects on the resistive switching characteristics of Pt/HfO2/Pt resistors are investigated by changing the forming and switching polarity. Resistive switching properties are evaluated and compared with the polarity operation procedures, such as the reset voltage (V-r), set voltage (V-s), and current levels at low and high resistance states. When the same forming and switching voltage polarity are applied to the resistor, their switching parameters are widely distributed. However, the opposite forming and switching voltage polarity procedures enhance the uniformity of the switching parameters. In particular, the V-s distribution is strongly affected by the voltage polarity variation. A model is proposed based on cone-shaped filament formation through the insulator and the cone diameter at the anode interface to explain the improved resistive switching characteristics under opposite polarity operation. The filament cone is thinner near the anode interface during the forming process; hence, the anode is altered by the application of a switching voltage with opposite polarity to the forming voltage polarity and the converted anode interface becomes the thicker part of the cone. The more uniform and stable switching behavior is attributed to control over the formation and rupture of the cone-shaped filaments at their thicker parts. (C) 2017 Elsevier B.V. All rights reserved. | en_US |
dc.description.sponsorship | This work was supported by Basic Science Research Program (2012R1A6A1029029), Nano Material Technology Development Program (2016M3A7B4910429), and Creative Materials Discovery Program on Creative Multilevel Research Center (2015M3D1A1068061) through the National Research Foundation of Korea (NRF) funded by the Ministry of Education and the Ministry of Science and ICT. | en_US |
dc.language.iso | en_US | en_US |
dc.publisher | ELSEVIER SCIENCE BV | en_US |
dc.subject | Resistive switching memory | en_US |
dc.subject | Operation voltage polarity | en_US |
dc.subject | Conducting filament | en_US |
dc.subject | Switching parameters | en_US |
dc.title | Improved resistive switching characteristics of a Pt/HfO2/Pt resistor by controlling anode interface with forming and switching polarity | en_US |
dc.type | Article | en_US |
dc.relation.volume | 435 | - |
dc.identifier.doi | 10.1016/j.apsusc.2017.11.073 | - |
dc.relation.page | 117-121 | - |
dc.relation.journal | APPLIED SURFACE SCIENCE | - |
dc.contributor.googleauthor | Jung, Yong Chan | - |
dc.contributor.googleauthor | Seong, Sejong | - |
dc.contributor.googleauthor | Lee, Taehoon | - |
dc.contributor.googleauthor | Kim, Seon Yong | - |
dc.contributor.googleauthor | Park, In-Sung | - |
dc.contributor.googleauthor | Ahn, Jinho | - |
dc.relation.code | 2018002021 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DIVISION OF MATERIALS SCIENCE AND ENGINEERING | - |
dc.identifier.pid | jhahn | - |
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