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dc.contributor.author안진호-
dc.date.accessioned2019-12-06T00:29:50Z-
dc.date.available2019-12-06T00:29:50Z-
dc.date.issued2018-03-
dc.identifier.citationAPPLIED SURFACE SCIENCE, v. 435, page. 117-121en_US
dc.identifier.issn0169-4332-
dc.identifier.issn1873-5584-
dc.identifier.urihttps://www.sciencedirect.com/science/article/pii/S0169433217333433?via%3Dihub-
dc.identifier.urihttps://repository.hanyang.ac.kr/handle/20.500.11754/117756-
dc.description.abstractThe anode interface effects on the resistive switching characteristics of Pt/HfO2/Pt resistors are investigated by changing the forming and switching polarity. Resistive switching properties are evaluated and compared with the polarity operation procedures, such as the reset voltage (V-r), set voltage (V-s), and current levels at low and high resistance states. When the same forming and switching voltage polarity are applied to the resistor, their switching parameters are widely distributed. However, the opposite forming and switching voltage polarity procedures enhance the uniformity of the switching parameters. In particular, the V-s distribution is strongly affected by the voltage polarity variation. A model is proposed based on cone-shaped filament formation through the insulator and the cone diameter at the anode interface to explain the improved resistive switching characteristics under opposite polarity operation. The filament cone is thinner near the anode interface during the forming process; hence, the anode is altered by the application of a switching voltage with opposite polarity to the forming voltage polarity and the converted anode interface becomes the thicker part of the cone. The more uniform and stable switching behavior is attributed to control over the formation and rupture of the cone-shaped filaments at their thicker parts. (C) 2017 Elsevier B.V. All rights reserved.en_US
dc.description.sponsorshipThis work was supported by Basic Science Research Program (2012R1A6A1029029), Nano Material Technology Development Program (2016M3A7B4910429), and Creative Materials Discovery Program on Creative Multilevel Research Center (2015M3D1A1068061) through the National Research Foundation of Korea (NRF) funded by the Ministry of Education and the Ministry of Science and ICT.en_US
dc.language.isoen_USen_US
dc.publisherELSEVIER SCIENCE BVen_US
dc.subjectResistive switching memoryen_US
dc.subjectOperation voltage polarityen_US
dc.subjectConducting filamenten_US
dc.subjectSwitching parametersen_US
dc.titleImproved resistive switching characteristics of a Pt/HfO2/Pt resistor by controlling anode interface with forming and switching polarityen_US
dc.typeArticleen_US
dc.relation.volume435-
dc.identifier.doi10.1016/j.apsusc.2017.11.073-
dc.relation.page117-121-
dc.relation.journalAPPLIED SURFACE SCIENCE-
dc.contributor.googleauthorJung, Yong Chan-
dc.contributor.googleauthorSeong, Sejong-
dc.contributor.googleauthorLee, Taehoon-
dc.contributor.googleauthorKim, Seon Yong-
dc.contributor.googleauthorPark, In-Sung-
dc.contributor.googleauthorAhn, Jinho-
dc.relation.code2018002021-
dc.sector.campusS-
dc.sector.daehakCOLLEGE OF ENGINEERING[S]-
dc.sector.departmentDIVISION OF MATERIALS SCIENCE AND ENGINEERING-
dc.identifier.pidjhahn-
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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