Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 박재근 | - |
dc.date.accessioned | 2019-12-05T14:58:18Z | - |
dc.date.available | 2019-12-05T14:58:18Z | - |
dc.date.issued | 2018-02 | - |
dc.identifier.citation | SCIENTIFIC REPORTS, v. 8, Article no. 2139 | en_US |
dc.identifier.issn | 2045-2322 | - |
dc.identifier.uri | https://www.nature.com/articles/s41598-018-20626-4 | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/117585 | - |
dc.description.abstract | A new perpendicular spin-transfer-torque magnetic-tunnel-junction (p-MTJ) spin-valve was developed to achieve a high tunneling magnetoresistance (TMR) ratio. It had a double MgO-based spin-valve structure with a top Co2Fe6B2 free layer and incorporated a single SyAF [Co(0.4 nm)/Pt(0.3 nm)](3) layer and a new buffer layer of Co(0.6)/Pt(0.3)/Co(0.4). It had a TMR ratio of 180% and anisotropy exchange field (H-ex) of 3.44 kOe after ex-situ annealing of 350 degrees C for 30 min under a vacuum below 10(-6) torr and a perpendicular magnetic field of 3 tesla, thereby ensuring a memory margin and avoiding read disturbance failures. Its high level of performance was due to the face-center-cubic crystallinity of the MgO tunneling barrier being significantly improved by decreasing its surface roughness (i.e., peak-to-valley length of 1.4 nm). | en_US |
dc.description.sponsorship | This work was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIP) (No. 2014R1A2A1A01006474) and Brain Korea 21 PLUS Program in 2014. | en_US |
dc.language.iso | en_US | en_US |
dc.publisher | NATURE PUBLISHING GROUP | en_US |
dc.subject | MAGNETORESISTANCE RATIO | en_US |
dc.subject | DEPENDENCY | en_US |
dc.subject | ANISOTROPY | en_US |
dc.title | Double MgO-based Perpendicular Magnetic-Tunnel-Junction Spin-valve Structure with a Top Co2Fe6B2 Free Layer using a Single SyAF [Co/Pt](n) Layer | en_US |
dc.type | Article | en_US |
dc.relation.volume | 8 | - |
dc.identifier.doi | 10.1038/s41598-018-20626-4 | - |
dc.relation.page | 1-5 | - |
dc.relation.journal | SCIENTIFIC REPORTS | - |
dc.contributor.googleauthor | Choi, Jin-Young | - |
dc.contributor.googleauthor | Lee, Dong-gi | - |
dc.contributor.googleauthor | Baek, Jong-Ung | - |
dc.contributor.googleauthor | Park, Jea-Gun | - |
dc.relation.code | 2018003596 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DEPARTMENT OF ELECTRONIC ENGINEERING | - |
dc.identifier.pid | parkjgl | - |
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