316 76

Full metadata record

DC FieldValueLanguage
dc.contributor.author박재근-
dc.date.accessioned2019-12-05T14:56:46Z-
dc.date.available2019-12-05T14:56:46Z-
dc.date.issued2018-02-
dc.identifier.citationSCIENTIFIC REPORTS, v. 8, Article no. 6902en_US
dc.identifier.issn2045-2322-
dc.identifier.urihttps://www.nature.com/articles/s41598-018-25255-5-
dc.identifier.urihttps://repository.hanyang.ac.kr/handle/20.500.11754/117584-
dc.description.sponsorshipThis work was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIP) (No. 2017R1A2A1A05001285) and Brain Korea 21 PLUS Program in 2014.en_US
dc.language.isoen_USen_US
dc.publisherNATURE PUBLISHING GROUPen_US
dc.titleDouble MgO-based Perpendicular Magnetic-Tunnel-Junction Spin-valve Structure with a Top Co2Fe6B2 Free Layer using a Single SyAF [Co/Pt](n) Layer (vol 8, 2139, 2018)en_US
dc.typeArticleen_US
dc.relation.volume8-
dc.identifier.doi10.1038/s41598-018-25255-5-
dc.relation.page2139-2139-
dc.relation.journalSCIENTIFIC REPORTS-
dc.contributor.googleauthorChoi, Jin-Young-
dc.contributor.googleauthorLee, Dong-gi-
dc.contributor.googleauthorBaek, Jong-Ung-
dc.contributor.googleauthorPark, Jea-Gun-
dc.relation.code2018003596-
dc.sector.campusS-
dc.sector.daehakCOLLEGE OF ENGINEERING[S]-
dc.sector.departmentDEPARTMENT OF ELECTRONIC ENGINEERING-
dc.identifier.pidparkjgl-


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE