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dc.contributor.author안진호-
dc.date.accessioned2019-12-05T06:39:17Z-
dc.date.available2019-12-05T06:39:17Z-
dc.date.issued2018-02-
dc.identifier.citationNANOSCALE, v. 10, no. 13, page. 5985-5989en_US
dc.identifier.issn2040-3364-
dc.identifier.issn2040-3372-
dc.identifier.urihttps://pubs.rsc.org/en/content/articlelanding/2018/NR/C8NR00421H#!divAbstract-
dc.identifier.urihttps://repository.hanyang.ac.kr/handle/20.500.11754/117443-
dc.description.abstractThickness effects on thermal conductivities of black phosphorus nanosheets, which are anisotropic in the zigzag and armchair planar directions, are experimentally and theoretically investigated in the thickness range of 13 to 48 nm. The thermal conductivities decrease with the thickness, decreasing from 13 to 8 W m(-1) K-1 in the zigzag direction and from 10 to 6 W m(-1) K-1 in the armchair direction at 300 K, respectively. The anisotropic thermal conductivities, regardless of the thickness, might result from the anisotropic phonon velocity arising from the hinge-like structure. The surface-driven suppression of the thermal conductivities at a nanometer scale is remarkable for a wide temperature range of 100 to 300 K due to phonon-boundary scattering, while the thermal conductivity becomes less dependent on the thickness at higher temperatures above 300 K, owing to the dominant phonon-phonon scattering.en_US
dc.description.sponsorshipThis research was supported by Low-dimensional Materials Genome Development by Korea research Institute of Standards and Science (KRISS - 2016 - 16011070) and by Creative Materials Discovery Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT and Future Planning (NRF-2017M3D1A1039561).en_US
dc.language.isoen_USen_US
dc.publisherROYAL SOC CHEMISTRYen_US
dc.subjectFIELD-EFFECT TRANSISTORSen_US
dc.subjectNANOWIRESen_US
dc.titleThickness-dependent and anisotropic thermal conductivity of black phosphorus nanosheetsen_US
dc.typeArticleen_US
dc.relation.no13-
dc.relation.volume10-
dc.identifier.doi10.1039/c8nr00421h-
dc.relation.page5985-5989-
dc.relation.journalNANOSCALE-
dc.contributor.googleauthorJeon, Seong Gi-
dc.contributor.googleauthorShin, Hosun-
dc.contributor.googleauthorJaung, Yun Hwan-
dc.contributor.googleauthorAhn, Jinho-
dc.contributor.googleauthorSong, Jae Yong-
dc.relation.code2018004000-
dc.sector.campusS-
dc.sector.daehakCOLLEGE OF ENGINEERING[S]-
dc.sector.departmentDIVISION OF MATERIALS SCIENCE AND ENGINEERING-
dc.identifier.pidjhahn-
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COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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