Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 권오경 | - |
dc.date.accessioned | 2019-12-04T05:01:41Z | - |
dc.date.available | 2019-12-04T05:01:41Z | - |
dc.date.issued | 2018-01 | - |
dc.identifier.citation | IEEE ELECTRON DEVICE LETTERS, v. 39, no. 1, page. 43-46 | en_US |
dc.identifier.issn | 0741-3106 | - |
dc.identifier.issn | 1558-0563 | - |
dc.identifier.uri | https://ieeexplore.ieee.org/document/8094877 | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/117173 | - |
dc.description.abstract | In this letter, the performance of amorphous In-Ga-Zn-O (a-IGZO) thin-film transistors (TFTs) is investigated using the stacked Mo-Ti/Cu source (S) and drain (D) electrodes. The test samples A and B of the a-IGZO TFT have interlayers with Mo/Ti ratios of 2.29 and 1.15, respectively, for the SD electrodes, and each has a core layer of Cu stacked on the top of the interlayers. They were fabricated and measured to compare their performance in terms of the transfer characteristic and mobility. The measurement results showed that the sample B with a lower Mo/Ti ratio exhibited better performance than the sample A: higher field-effect mobility by 4.4 cm(2)/V-s, higher saturation mobility by 3.2 cm(2)/V-s, smaller sub-threshold slope by 0.91 V/decade, and lower threshold voltageby 1.4V. In addition, the material properties of samples A and B were obtained using the line scan of the energy dispersive spectroscopy and analyzed with technology computer-aided design simulation. As a result, the performance of a-IGZO TFTs can be optimized by tuning the Mo/Ti ratios of the interlayer in the stacked SD electrodes. | en_US |
dc.language.iso | en_US | en_US |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | en_US |
dc.subject | Amorphous In-Ga-Zn-O | en_US |
dc.subject | stacked electrode | en_US |
dc.subject | thin-film transistor | en_US |
dc.subject | trap states | en_US |
dc.title | Effects of Stacked Mo-Ti/Cu Source and Drain Electrodes on the Performance of Amorphous In-Ga-Zn-O Thin-Film Transistors | en_US |
dc.type | Article | en_US |
dc.relation.no | 1 | - |
dc.relation.volume | 39 | - |
dc.identifier.doi | 10.1109/LED.2017.2769669 | - |
dc.relation.page | 43-46 | - |
dc.relation.journal | IEEE ELECTRON DEVICE LETTERS | - |
dc.contributor.googleauthor | Kim, Lee-Young | - |
dc.contributor.googleauthor | Kwon, Oh-Kyong | - |
dc.relation.code | 2018000192 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DEPARTMENT OF ELECTRONIC ENGINEERING | - |
dc.identifier.pid | okwon | - |
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