Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 박진성 | - |
dc.date.accessioned | 2019-12-04T01:51:09Z | - |
dc.date.available | 2019-12-04T01:51:09Z | - |
dc.date.issued | 2018-01 | - |
dc.identifier.citation | CERAMICS INTERNATIONAL, v. 44, no. 1, page. 459-463 | en_US |
dc.identifier.issn | 0272-8842 | - |
dc.identifier.issn | 1873-3956 | - |
dc.identifier.uri | https://www.sciencedirect.com/science/article/pii/S0272884217321296?via%3Dihub | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/117029 | - |
dc.description.abstract | Aluminum oxide (Al2O3) dielectric layers were grown by a mist-chemical vapor deposition (mist-CVD) process at 300 degrees C, using solvent mixtures containing acetone and water. As the acetone to water ratio was varied from 9:1 to 7:3, the leakage current of Al2O3 at an electric field of 7 MV/cm(2) decreased from 9.0 x 10(-7) to 4.4 x 10(-10) A/cm(2), and the dielectric constant increased from 6.03 to 6.85 with improved hysteresis during capacitance-voltage measurements. Consequently, the most robust Al2O3 films were obtained at an acetone to water ratio of 7:3, with a dielectric constant (kappa) close to the ideal value 7.0, and a breakdown field of approximately 9 MV/cm. Thin film transistors (TFTs) incorporating In-Sn-Zn-O (ITZO) as the semiconductor were fabricated with the Al2O3 (7:3) dielectric onto p(++)-Si substrates. The devices exhibit high electrical performance, with a high field effect mobility of 42.7 cm(2)V(-1)s(-1), and a small subthreshold swing (S.S.) value of 0.44 V/decade. | en_US |
dc.description.sponsorship | This research was supported by the MOTIE (Ministry of Trade, Industry & Energy, #10051403), KDRC (Korea Display Research Corporation, #10052020). | en_US |
dc.language.iso | en_US | en_US |
dc.publisher | ELSEVIER SCI LTD | en_US |
dc.subject | Mist chemical vapor deposition | en_US |
dc.subject | Aluminum oxide | en_US |
dc.subject | Solution process | en_US |
dc.subject | Atmospheric | en_US |
dc.subject | Thin film transistors(TFTs) | en_US |
dc.title | The effect of solvent water content on the dielectric properties of Al2O3 films grown by atmospheric pressure mist-CVD | en_US |
dc.type | Article | en_US |
dc.relation.no | 1 | - |
dc.relation.volume | 44 | - |
dc.identifier.doi | 10.1016/j.ceramint.2017.09.198 | - |
dc.relation.page | 459-463 | - |
dc.relation.journal | CERAMICS INTERNATIONAL | - |
dc.contributor.googleauthor | Kim, Dong-Hyun | - |
dc.contributor.googleauthor | Jeong, Hyun-Jun | - |
dc.contributor.googleauthor | Park, Jozeph | - |
dc.contributor.googleauthor | Park, Jin-Seong | - |
dc.relation.code | 2018002213 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DIVISION OF MATERIALS SCIENCE AND ENGINEERING | - |
dc.identifier.pid | jsparklime | - |
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