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dc.contributor.author박진성-
dc.date.accessioned2019-12-04T01:19:56Z-
dc.date.available2019-12-04T01:19:56Z-
dc.date.issued2018-01-
dc.identifier.citationACS APPLIED MATERIALS & INTERFACES, v. 10, no. 3, page. 2709-2715en_US
dc.identifier.issn1944-8244-
dc.identifier.issn1944-8252-
dc.identifier.urihttps://pubs.acs.org/doi/10.1021/acsami.7b16046-
dc.identifier.urihttps://repository.hanyang.ac.kr/handle/20.500.11754/116985-
dc.description.abstractPhotochemical reactions in inorganic films, which can, be promoted by the addition, of thermal energy, enable significant changes in the properties of films. Metaphase films depend significantly on introducing external energy even at low temperatures.: We performed thermal-induced, deep ultraviolet, based, thermal-photochemical activation of metaphase ZnOxNy films at low temperature, and we observed peculiar-variations, in the nanostructures with phase transformation and densification. The separated; Zn3N2 and ZnO nanocrystalline lattice in amorphous ZnOxNy was-stabilized remarkably by the-reduction Of oxygen defects and IT;the interfacial atomic rearrangement without breaking the N-bonding. On the basis of these approaches, we successfully demonstrated highly flexible, nanocrystalline-ZnOxNy thin-film transistors on polyethylene naphthalate films, and the saturation mobility showed more than 60 cm(2) V-1 s(-1).en_US
dc.description.sponsorshipThis research was supported by MOTIE (Ministry of Trade, Industry, & Energy) (project numbers 10051403 and 10052020) and KDRC (Korea Display Research Corporation). In addition, this work was partially supported by the Ministry of Science, ICT, & Future Planning (MISP) of Korea, under its National Program for Excellence in Software (the SW-oriented, college-support program) (R7718-16-1005) supervised by the Institute for Information & Communications Technology Promotion (IITP).en_US
dc.language.isoen_USen_US
dc.publisherAMER CHEMICAL SOCen_US
dc.subjectzinc-oxynitrideen_US
dc.subjectphotochemical reactionen_US
dc.subjectlow-temperature processen_US
dc.subjectthin-film transistorsen_US
dc.subjectflexible electronicsen_US
dc.titlePhotothermally Activated Nanocrystalline Oxynitride with Superior Performance in Flexible Field-Effect Transistorsen_US
dc.typeArticleen_US
dc.relation.no3-
dc.relation.volume10-
dc.identifier.doi10.1021/acsami.7b16046-
dc.relation.page2709-2715-
dc.relation.journalACS APPLIED MATERIALS & INTERFACES-
dc.contributor.googleauthorOk, Kyung-Chul-
dc.contributor.googleauthorLim, Jun-Hyung-
dc.contributor.googleauthorJeong, Hyun-Jun-
dc.contributor.googleauthorLee, Hyun-Mo-
dc.contributor.googleauthorRim, You Seung-
dc.contributor.googleauthorPark, Jin-Seong-
dc.relation.code2018001712-
dc.sector.campusS-
dc.sector.daehakCOLLEGE OF ENGINEERING[S]-
dc.sector.departmentDIVISION OF MATERIALS SCIENCE AND ENGINEERING-
dc.identifier.pidjsparklime-
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COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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