Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 박진성 | - |
dc.date.accessioned | 2019-12-04T01:19:56Z | - |
dc.date.available | 2019-12-04T01:19:56Z | - |
dc.date.issued | 2018-01 | - |
dc.identifier.citation | ACS APPLIED MATERIALS & INTERFACES, v. 10, no. 3, page. 2709-2715 | en_US |
dc.identifier.issn | 1944-8244 | - |
dc.identifier.issn | 1944-8252 | - |
dc.identifier.uri | https://pubs.acs.org/doi/10.1021/acsami.7b16046 | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/116985 | - |
dc.description.abstract | Photochemical reactions in inorganic films, which can, be promoted by the addition, of thermal energy, enable significant changes in the properties of films. Metaphase films depend significantly on introducing external energy even at low temperatures.: We performed thermal-induced, deep ultraviolet, based, thermal-photochemical activation of metaphase ZnOxNy films at low temperature, and we observed peculiar-variations, in the nanostructures with phase transformation and densification. The separated; Zn3N2 and ZnO nanocrystalline lattice in amorphous ZnOxNy was-stabilized remarkably by the-reduction Of oxygen defects and IT;the interfacial atomic rearrangement without breaking the N-bonding. On the basis of these approaches, we successfully demonstrated highly flexible, nanocrystalline-ZnOxNy thin-film transistors on polyethylene naphthalate films, and the saturation mobility showed more than 60 cm(2) V-1 s(-1). | en_US |
dc.description.sponsorship | This research was supported by MOTIE (Ministry of Trade, Industry, & Energy) (project numbers 10051403 and 10052020) and KDRC (Korea Display Research Corporation). In addition, this work was partially supported by the Ministry of Science, ICT, & Future Planning (MISP) of Korea, under its National Program for Excellence in Software (the SW-oriented, college-support program) (R7718-16-1005) supervised by the Institute for Information & Communications Technology Promotion (IITP). | en_US |
dc.language.iso | en_US | en_US |
dc.publisher | AMER CHEMICAL SOC | en_US |
dc.subject | zinc-oxynitride | en_US |
dc.subject | photochemical reaction | en_US |
dc.subject | low-temperature process | en_US |
dc.subject | thin-film transistors | en_US |
dc.subject | flexible electronics | en_US |
dc.title | Photothermally Activated Nanocrystalline Oxynitride with Superior Performance in Flexible Field-Effect Transistors | en_US |
dc.type | Article | en_US |
dc.relation.no | 3 | - |
dc.relation.volume | 10 | - |
dc.identifier.doi | 10.1021/acsami.7b16046 | - |
dc.relation.page | 2709-2715 | - |
dc.relation.journal | ACS APPLIED MATERIALS & INTERFACES | - |
dc.contributor.googleauthor | Ok, Kyung-Chul | - |
dc.contributor.googleauthor | Lim, Jun-Hyung | - |
dc.contributor.googleauthor | Jeong, Hyun-Jun | - |
dc.contributor.googleauthor | Lee, Hyun-Mo | - |
dc.contributor.googleauthor | Rim, You Seung | - |
dc.contributor.googleauthor | Park, Jin-Seong | - |
dc.relation.code | 2018001712 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DIVISION OF MATERIALS SCIENCE AND ENGINEERING | - |
dc.identifier.pid | jsparklime | - |
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