Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 김태환 | - |
dc.date.accessioned | 2019-12-04T00:31:05Z | - |
dc.date.available | 2019-12-04T00:31:05Z | - |
dc.date.issued | 2018-01 | - |
dc.identifier.citation | APPLIED SURFACE SCIENCE, v. 429, page. 231-236 | en_US |
dc.identifier.issn | 0169-4332 | - |
dc.identifier.issn | 1873-5584 | - |
dc.identifier.uri | https://www.sciencedirect.com/science/article/pii/S0169433217324522?via%3Dihub | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/116917 | - |
dc.description.abstract | Current-voltage (I-V) curves for the Al/polymer (9-vinylcarbazole) (PVK)/graphene oxide (GO):mica/PVK/indium-tin oxide (ITO) devices at 300K showed a current bistability with a maximum high conductivity (ON)/low conductivity (OFF) ratio of 2 x 10(4), which was approximately 10 times larger than that of the device without a PVK layer. The endurance number of ON/OFF switchings for the Al/PVK/GO:mica/PVK/ITO device was 1 x 10(2) cycles, which was 20 times larger than that for the Al/GO:mica/ITO device. The "erase" voltages were distributed between 2.3 and 3V, and the "write" voltages were distributed between -1.2 and -0.5 V. The retention time for the Al/PVK/GO:mica/PVK/ITO device was above 1 x 10(4) s, indicative of the memory stability of the device. The carrier transport mechanisms occurring in the Al/PVK/GO:mica/PVK/ITO and the Al/GO:mica/ITO devices are described on the basis of the I-V results and the energy band diagrams. (C) 2017 Elsevier B.V. All rights reserved. | en_US |
dc.description.sponsorship | This research was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (2016R1A2A1A05005502). | en_US |
dc.language.iso | en_US | en_US |
dc.publisher | ELSEVIER SCIENCE BV | en_US |
dc.subject | Graphene oxide | en_US |
dc.subject | Mica | en_US |
dc.subject | PVK | en_US |
dc.subject | Nanocomposite | en_US |
dc.subject | Organic bistable device | en_US |
dc.title | Enhancements of the memory margin and the stability of an organic bistable device due to a graphene oxide:mica nanocomposite sandwiched between two polymer (9-vinylcarbazole) buffer layers | en_US |
dc.type | Article | en_US |
dc.relation.volume | 429 | - |
dc.identifier.doi | 10.1016/j.apsusc.2017.08.105 | - |
dc.relation.page | 231-236 | - |
dc.relation.journal | APPLIED SURFACE SCIENCE | - |
dc.contributor.googleauthor | Kim, Woo Kyum | - |
dc.contributor.googleauthor | Wu, Chaoxing | - |
dc.contributor.googleauthor | Lee, Dea Uk | - |
dc.contributor.googleauthor | Kim, Hyoun Woo | - |
dc.contributor.googleauthor | Kim, Tae Whan | - |
dc.relation.code | 2018002021 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DEPARTMENT OF ELECTRONIC ENGINEERING | - |
dc.identifier.pid | twk | - |
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