Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 정재경 | - |
dc.date.accessioned | 2019-12-03T06:24:33Z | - |
dc.date.available | 2019-12-03T06:24:33Z | - |
dc.date.issued | 2017-12 | - |
dc.identifier.citation | IEEE TRANSACTIONS ON ELECTRON DEVICES, v. 64, no. 12, page. 4965-4973 | en_US |
dc.identifier.issn | 0018-9383 | - |
dc.identifier.issn | 1557-9646 | - |
dc.identifier.uri | https://ieeexplore.ieee.org/document/8093755 | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/116878 | - |
dc.description.abstract | This paper examined the performance and bias stability of amorphous In-Ga-Zn-O (a-IGZO) thin-film transistors (TFTs) with a self-aligned coplanar structure. The activation energy barrier responsible for the positive bias thermal stress (PBTS)-induced instability of the a-IGZO TFTs with low oxygen loadings can be attributed to the migration of cation interstitial defects. However, the IGZO TFTs with high oxygen loadings could not be explained by the existing defect model. The first-principle calculation indicates that the cation vacancy, such as V-In, with the hydrogen incorporation plays an important role in determining the PBTS-dependent degradation of the threshold voltage. | en_US |
dc.description.sponsorship | This work was supported by the Research Grant from Samsung Display. The review of this paper was arranged by Editor X. Guo. (N. On and Y. Kang contributed equally to this work.) (Corresponding author: Jae Kyeong Jeong.) | en_US |
dc.language.iso | en_US | en_US |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | en_US |
dc.subject | Amorphous In-Ga-Zn-O (a-IGZO) | en_US |
dc.subject | cation interstitial | en_US |
dc.subject | instability | en_US |
dc.subject | oxygen vacancy | en_US |
dc.subject | thin-film transistor (TFT) | en_US |
dc.title | Origin of electrical instabilities in self-aligned amorphous In-Ga-Zn-O thin-film transistors | en_US |
dc.type | Article | en_US |
dc.relation.no | 12 | - |
dc.relation.volume | 64 | - |
dc.identifier.doi | 10.1109/TED.2017.2766148 | - |
dc.relation.page | 4965-4973 | - |
dc.relation.journal | IEEE TRANSACTIONS ON ELECTRON DEVICES | - |
dc.contributor.googleauthor | On, Nuri | - |
dc.contributor.googleauthor | Kang, Youngho | - |
dc.contributor.googleauthor | Song, Aeran | - |
dc.contributor.googleauthor | Du Ahn, Byung | - |
dc.contributor.googleauthor | Kim, Hye Dong | - |
dc.contributor.googleauthor | Lim, Jun Hyung | - |
dc.contributor.googleauthor | Chung, Kwun-Bum | - |
dc.contributor.googleauthor | Han, Seungwu | - |
dc.contributor.googleauthor | Jeong, Jae Kyeong | - |
dc.relation.code | 2017003133 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DEPARTMENT OF ELECTRONIC ENGINEERING | - |
dc.identifier.pid | jkjeong1 | - |
dc.identifier.orcid | http://orcid.org/0000-0003-3857-1039 | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.