Ultraviolet photodetector using pn junction formed by transferrable hollow n-TiO2 nano-spheres monolayer

Abstract

We report an ultraviolet (UV) photodetector with a universally transferable monolayer film with ordered hollow TiO2 spheres on p-GaN. After forming a TiO2 monolayer film by unidirectional rubbing of hollow TiO2 spheres on a polydimethylsiloxane (PDMS) supporting plate, we used a 5% polyvinyl alcohol (PVA) aqueous solution to transfer the film onto the target substrate. The PVA/TiO2 monolayer film was detached from the PDMS film and transferred to the p-GaN/Al2O3 substrate. To investigate the effects of crystallized phases of the TiO2 hollow spheres, anatase and rutile TiO2 sphere monolayers prepared by combining template synthesis and thermal treatment. The responsiveness of the UV photodetectors using anatase and rutile hollow n-TiO2 monolayer/p-GaN was 0.203 A/W at 312 nm and 0.093 A/W at 327 nm, respectively.