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dc.contributor.author장재영-
dc.date.accessioned2019-12-01T18:25:49Z-
dc.date.available2019-12-01T18:25:49Z-
dc.date.issued2017-11-
dc.identifier.citationORGANIC ELECTRONICS, v. 50, page. 296-303en_US
dc.identifier.issn1566-1199-
dc.identifier.issn1878-5530-
dc.identifier.urihttps://www.sciencedirect.com/science/article/pii/S156611991730383X?via%3Dihub-
dc.identifier.urihttps://repository.hanyang.ac.kr/handle/20.500.11754/116100-
dc.description.abstractPolymer substrates are essential components of flexible electronic applications such as OTFTs, OPVs, and OLEDs. However, high water vapor permeability of polymer films can significantly reduce the lifetime of flexible electronic devices. In this study, we examined the water vapor permeation barrier properties of Al2O3/HfO2 mixed oxide films on polymer substrates. Al2O3/HfO2 films deposited by plasma-enhanced atomic layer deposition were transparent, chemically stable in water and densely amorphous. At 60 degrees C and 90% relative humidity (RH) accelerated condition, 50-nm-thick Al2O3/HfO2 had water vapor transmission rate (WVTR) = 1.44 x 10(-4) g m(-2) d(-1). whereas single layers of Al2O3 had WVTR -3.26 x 10(-4)gm(-2) d(-1) and of HfO2 had WVTR -6.75 x 10(-2)gm(-2) d(-1). At 25 degrees C and 40% RH, 50nm-thick Al2O3/HfO2 film had WVTR -2.63 x 10(-6) g m(-2) d(-1), which is comparable to WVTR of conventional glass encapsulation. (C) 2017 Elsevier B.V. All rights reserved.en_US
dc.description.sponsorshipThis research was supported by a New & Renewable Energy of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) grant funded by the Korean Government through the Ministry of Knowledge Economy (20123010010140), the Samsung Display Corporation, and the Center for Advanced Soft Electronics under the Global Frontier Research Program (Grant No. 2013M3A6A5073175).en_US
dc.language.isoen_USen_US
dc.publisherELSEVIER SCIENCE BVen_US
dc.subjectAl2O3en_US
dc.subjectHfO2en_US
dc.subjectMixed oxide filmen_US
dc.subjectPlasma-enhanced atomic layer deposition (PEALD)en_US
dc.subjectThin-film encapsulation (TFE)en_US
dc.titleHighly-impermeable Al2O3/HfO2 moisture barrier films grown by lowtemperature plasma-enhanced atomic layer depositionen_US
dc.typeArticleen_US
dc.relation.volume50-
dc.identifier.doi10.1016/j.orgel.2017.07.051-
dc.relation.page296-303-
dc.relation.journalORGANIC ELECTRONICS-
dc.contributor.googleauthorKim, Lae Ho-
dc.contributor.googleauthorJang, Jin Hyuk-
dc.contributor.googleauthorJeong, Yong Jin-
dc.contributor.googleauthorKim, Kyunghun-
dc.contributor.googleauthorBaek, Yonghwa-
dc.contributor.googleauthorKwon, Hyeok-jin-
dc.contributor.googleauthorAn, Tae Kyu-
dc.contributor.googleauthorNam, Sooji-
dc.contributor.googleauthorKim, Se Hyun-
dc.contributor.googleauthorJang, Jaeyoung-
dc.relation.code2017003342-
dc.sector.campusS-
dc.sector.daehakCOLLEGE OF ENGINEERING[S]-
dc.sector.departmentDEPARTMENT OF ENERGY ENGINEERING-
dc.identifier.pidjyjang15-
dc.identifier.researcherIDS-5179-2019-
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > ENERGY ENGINEERING(에너지공학과) > Articles
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