Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 장재영 | - |
dc.date.accessioned | 2019-12-01T18:25:49Z | - |
dc.date.available | 2019-12-01T18:25:49Z | - |
dc.date.issued | 2017-11 | - |
dc.identifier.citation | ORGANIC ELECTRONICS, v. 50, page. 296-303 | en_US |
dc.identifier.issn | 1566-1199 | - |
dc.identifier.issn | 1878-5530 | - |
dc.identifier.uri | https://www.sciencedirect.com/science/article/pii/S156611991730383X?via%3Dihub | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/116100 | - |
dc.description.abstract | Polymer substrates are essential components of flexible electronic applications such as OTFTs, OPVs, and OLEDs. However, high water vapor permeability of polymer films can significantly reduce the lifetime of flexible electronic devices. In this study, we examined the water vapor permeation barrier properties of Al2O3/HfO2 mixed oxide films on polymer substrates. Al2O3/HfO2 films deposited by plasma-enhanced atomic layer deposition were transparent, chemically stable in water and densely amorphous. At 60 degrees C and 90% relative humidity (RH) accelerated condition, 50-nm-thick Al2O3/HfO2 had water vapor transmission rate (WVTR) = 1.44 x 10(-4) g m(-2) d(-1). whereas single layers of Al2O3 had WVTR -3.26 x 10(-4)gm(-2) d(-1) and of HfO2 had WVTR -6.75 x 10(-2)gm(-2) d(-1). At 25 degrees C and 40% RH, 50nm-thick Al2O3/HfO2 film had WVTR -2.63 x 10(-6) g m(-2) d(-1), which is comparable to WVTR of conventional glass encapsulation. (C) 2017 Elsevier B.V. All rights reserved. | en_US |
dc.description.sponsorship | This research was supported by a New & Renewable Energy of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) grant funded by the Korean Government through the Ministry of Knowledge Economy (20123010010140), the Samsung Display Corporation, and the Center for Advanced Soft Electronics under the Global Frontier Research Program (Grant No. 2013M3A6A5073175). | en_US |
dc.language.iso | en_US | en_US |
dc.publisher | ELSEVIER SCIENCE BV | en_US |
dc.subject | Al2O3 | en_US |
dc.subject | HfO2 | en_US |
dc.subject | Mixed oxide film | en_US |
dc.subject | Plasma-enhanced atomic layer deposition (PEALD) | en_US |
dc.subject | Thin-film encapsulation (TFE) | en_US |
dc.title | Highly-impermeable Al2O3/HfO2 moisture barrier films grown by lowtemperature plasma-enhanced atomic layer deposition | en_US |
dc.type | Article | en_US |
dc.relation.volume | 50 | - |
dc.identifier.doi | 10.1016/j.orgel.2017.07.051 | - |
dc.relation.page | 296-303 | - |
dc.relation.journal | ORGANIC ELECTRONICS | - |
dc.contributor.googleauthor | Kim, Lae Ho | - |
dc.contributor.googleauthor | Jang, Jin Hyuk | - |
dc.contributor.googleauthor | Jeong, Yong Jin | - |
dc.contributor.googleauthor | Kim, Kyunghun | - |
dc.contributor.googleauthor | Baek, Yonghwa | - |
dc.contributor.googleauthor | Kwon, Hyeok-jin | - |
dc.contributor.googleauthor | An, Tae Kyu | - |
dc.contributor.googleauthor | Nam, Sooji | - |
dc.contributor.googleauthor | Kim, Se Hyun | - |
dc.contributor.googleauthor | Jang, Jaeyoung | - |
dc.relation.code | 2017003342 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DEPARTMENT OF ENERGY ENGINEERING | - |
dc.identifier.pid | jyjang15 | - |
dc.identifier.researcherID | S-5179-2019 | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.