Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 정재경 | - |
dc.date.accessioned | 2019-12-01T17:17:42Z | - |
dc.date.available | 2019-12-01T17:17:42Z | - |
dc.date.issued | 2017-10 | - |
dc.identifier.citation | PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, v. 11, no. 10, Article no. 1700213 | en_US |
dc.identifier.issn | 1862-6254 | - |
dc.identifier.issn | 1862-6270 | - |
dc.identifier.uri | https://onlinelibrary.wiley.com/doi/abs/10.1002/pssr.201700213 | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/116024 | - |
dc.description.abstract | This study examined the insertion effect of an interfacial, 7-nm-thick SiNx and SiOF layer on the performance of p-channel tin monoxide (SnO) fieldeffect transistors (FETs). The control SnO FETs, which had a thermal SiO2 gate dielectric, exhibited a mobility, gate swing, threshold voltage (V-TH) and I-ON/OFF ratio of 2.8 cm(2) V(-1)s(-1), 6.9 V decade(-1), 19.0 V, and 1.8 x 10(3), respectively. The SiNx-inserted SnO FETs showed a loss in drain current modulation due to the creation of interfacial trap states. In contrast, the gate swing and VTH values were improved substantially to 5.4 V decade(-1) and 2.0 V for the SiOF-inserted SnO FETs, respectively, whereas the comparable mobility and ION/OFF ratio were preserved. The rationale of the improvement is discussed with respect to Fermi-energy pinning based on the valence band spectra. | en_US |
dc.description.sponsorship | This study was supported by Samsung Research Funding for Future Technology. | en_US |
dc.language.iso | en_US | en_US |
dc.publisher | WILEY-V C H VERLAG GMBH | en_US |
dc.subject | field-effect transistors | en_US |
dc.subject | p-type semiconductors | en_US |
dc.subject | SiOF | en_US |
dc.subject | SnO | en_US |
dc.title | Impact of an interfacial layer on the electrical performance of p-channel tin monoxide field-effect transistors | en_US |
dc.type | Article | en_US |
dc.relation.no | 1 | - |
dc.relation.volume | 11 | - |
dc.identifier.doi | 10.1002/pssr.201700213 | - |
dc.relation.page | 213-213 | - |
dc.relation.journal | PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS | - |
dc.contributor.googleauthor | Han, Sang Jin | - |
dc.contributor.googleauthor | Kim, Sungmin | - |
dc.contributor.googleauthor | Jeong, Jae Kyeong | - |
dc.contributor.googleauthor | Kim, Hyeong Joon | - |
dc.relation.code | 2017001960 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DEPARTMENT OF ELECTRONIC ENGINEERING | - |
dc.identifier.pid | jkjeong1 | - |
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