Repository at Hanyang UniversityCOLLEGE OF ENGINEERING[S](공과대학)ELECTRONIC ENGINEERING(융합전자공학부)Articles
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 김태환 | - |
| dc.date.accessioned | 2019-11-29T07:13:15Z | - |
| dc.date.available | 2019-11-29T07:13:15Z | - |
| dc.date.issued | 2017-08 | - |
| dc.identifier.citation | IEEE ELECTRON DEVICE LETTERS, v. 38, no. 10, page. 1375-1378 | en_US |
| dc.identifier.issn | 0741-3106 | - |
| dc.identifier.issn | 1558-0563 | - |
| dc.identifier.uri | https://ieeexplore.ieee.org/document/8023864 | - |
| dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/115211 | - |
| dc.description.abstract | The effects of taper angle of the string and the number of layers on the electrical characteristics of vertical NAND flash memories are investigated. Simulation results show that the transconductance and the threshold voltage distribution over the position of the cell along the string depend on taper angle and the number of layers. There is a taper angle that minimizes the spread of threshold voltage, and hence, the impact of the random telegraph noise and this angle depends on the number of layers. These results will be helpful in designing the vertical NAND flash memories. | en_US |
| dc.description.sponsorship | This work was supported in part by the Basic Science Research Program through the National Research Foundation of Korea, Ministry of Education, Science and Technology, under Grant 2016R1A2A1A05005502, and in part by IDEC (EDA Tool, MPW). The review of this letter was arranged by Editor D. Ha. ( Corresponding author: Tae Whan Kim.) | en_US |
| dc.language.iso | en_US | en_US |
| dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | en_US |
| dc.subject | 3-D flash memories | en_US |
| dc.subject | taper angle | en_US |
| dc.subject | threshold voltage | en_US |
| dc.title | The Effects of Taper-Angle on the Electrical Characteristics of Vertical NAND Flash Memories | en_US |
| dc.type | Article | en_US |
| dc.identifier.doi | 10.1109/LED.2017.2747631 | - |
| dc.relation.page | 1375-1378 | - |
| dc.relation.journal | IEEE ELECTRON DEVICE LETTERS | - |
| dc.contributor.googleauthor | Kim, Kee Tae | - |
| dc.contributor.googleauthor | An, Sung Woo | - |
| dc.contributor.googleauthor | Jung, Hyun Soo | - |
| dc.contributor.googleauthor | Yoo, Keon-Ho | - |
| dc.contributor.googleauthor | Kim, Tae Whan | - |
| dc.relation.code | 2017000338 | - |
| dc.sector.campus | S | - |
| dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
| dc.sector.department | DEPARTMENT OF ELECTRONIC ENGINEERING | - |
| dc.identifier.pid | twk | - |
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