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dc.contributor.authorBukhvalov Danil-
dc.date.accessioned2019-11-29T05:55:02Z-
dc.date.available2019-11-29T05:55:02Z-
dc.date.issued2017-08-
dc.identifier.citationSCIENTIFIC REPORTS, v. 7, Article no. 5758en_US
dc.identifier.issn2045-2322-
dc.identifier.urihttps://www.nature.com/articles/s41598-017-06069-3-
dc.identifier.urihttps://repository.hanyang.ac.kr/handle/20.500.11754/115182-
dc.description.abstractTopological insulators have become one of the most prominent research topics in materials science in recent years. Specifically, Bi2Te3 is one of the most promising for technological applications due to its conductive surface states and insulating bulk properties. Herein, we contrast the bulk and surface structural environments of dopant ions Cr, Mn, Fe, Co, Ni, and Cu in Bi2Te3 thin films in order to further elucidate this compound. Our measurements show the preferred oxidation state and surrounding crystal environment of each 3d-metal atomic species, and how they are incorporated into Bi2Te3. We show that in each case there is a unique interplay between structural environments, and that it is highly dependant on the dopant atom. Mn impurities in Bi2Te3 purely substitute into Bi sites in a 2+ oxidation state. Cr atoms seem only to reside on the surface and are effectively not able to be absorbed into the bulk. Whereas for Co and Ni, an array of substitutional, interstitial, and metallic configurations occur. Considering the relatively heavy Cu atoms, metallic clusters are highly favourable. The situation with Fe is even more complex, displaying a mix of oxidation states that differ greatly between the surface and bulk environments.en_US
dc.description.sponsorshipThe XAS measurements were performed at the Canadian Light Source, and XES measurements were performed at the Advanced Light Source; both were supported by the Natural Sciences and Engineering Research Council of Canada (NSERC) and the Canada Research Chair program. XPS measurements were supported by the Ministry of Education and Science of Russian Federation (Project RFMEFI 58714x0002). The ion implantation of Bi<INF>2</INF>Te<INF>3</INF> thin films was supported by Act 211 Government of the Russian Federation, agreement No. 02.A03.21.0006.en_US
dc.language.isoen_USen_US
dc.publisherNATURE PUBLISHING GROUPen_US
dc.subjectSINGLE DIRAC CONEen_US
dc.subjectBI2SE3en_US
dc.subjectTEMPERATUREen_US
dc.subjectFILMen_US
dc.titleBulk vs. Surface Structure of 3d Metal Impurities in Topological Insulator Bi2Te3en_US
dc.typeArticleen_US
dc.relation.volume7-
dc.identifier.doi10.1038/s41598-017-06069-3-
dc.relation.page5758-5758-
dc.relation.journalSCIENTIFIC REPORTS-
dc.contributor.googleauthorLeedahl, B.-
dc.contributor.googleauthorBoukhvalov, D. W.-
dc.contributor.googleauthorKurmaev, E. Z.-
dc.contributor.googleauthorKukharenko, A.-
dc.contributor.googleauthorZhidkov, I. S.-
dc.contributor.googleauthorGavrilov, N. V.-
dc.contributor.googleauthorCholakh, S. O.-
dc.contributor.googleauthorLe, P. Huu-
dc.contributor.googleauthorLuo, C. Wei-
dc.contributor.googleauthorMoewes, A.-
dc.relation.code2017003408-
dc.sector.campusS-
dc.sector.daehakCOLLEGE OF NATURAL SCIENCES[S]-
dc.sector.departmentDEPARTMENT OF CHEMISTRY-
dc.identifier.piddanil-
dc.identifier.researcherIDF-7517-2017-


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