Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 김태환 | - |
dc.date.accessioned | 2019-11-26T05:29:17Z | - |
dc.date.available | 2019-11-26T05:29:17Z | - |
dc.date.issued | 2017-06 | - |
dc.identifier.citation | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v. 17, no. 6, page. 4176-4179 | en_US |
dc.identifier.issn | 1533-4880 | - |
dc.identifier.issn | 1533-4899 | - |
dc.identifier.uri | https://www.ingentaconnect.com/content/asp/jnn/2017/00000017/00000006/art00087 | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/114592 | - |
dc.description.abstract | Current-voltage (I-V) curves for the Al/poly(methylmethacrylate) (PMMA)/AuCl3 nanoparticles embedded in PMMA layer/PMMA/indium-tin-oxide (ITO) devices at 300 K showed that the memory margins of the I-V curves were significantly affected by changing AuCl3 concentration. An ON/OFF ratio of 10(3) for the device with an AuCl3 nanoparticle concentration of 0.5 wt% was observed. The retention of the organic bistable devices (OBDs) was maintained for retention times larger than 1 x 10(4) s, indicative of the stability of the device. The memory mechanisms of the fabricated OBDs were described by using charge trapping and tunneling processes shown in the energy diagram and the I-V curves. | en_US |
dc.description.sponsorship | This research was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (2016R1A2A1A05005502). | en_US |
dc.language.iso | en_US | en_US |
dc.publisher | AMER SCIENTIFIC PUBLISHERS | en_US |
dc.subject | AuCl3 Nanoparticles | en_US |
dc.subject | PMMA | en_US |
dc.subject | Concentration | en_US |
dc.subject | Charge Trapping | en_US |
dc.subject | Tunneling | en_US |
dc.title | Effect of the Concentration of the AuCl3 Nanoparticles Embedded in a Poly(Methylmethacrylate) Layer on the Electrical Characteristics in Organic Bistable Devices | en_US |
dc.type | Article | en_US |
dc.relation.no | 6 | - |
dc.relation.volume | 17 | - |
dc.identifier.doi | 10.1166/jnn.2017.13427 | - |
dc.relation.page | 4176-4179 | - |
dc.relation.journal | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | - |
dc.contributor.googleauthor | Lee, Nam Hyun | - |
dc.contributor.googleauthor | Kim, Tae Whan | - |
dc.relation.code | 2017011537 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DEPARTMENT OF ELECTRONIC ENGINEERING | - |
dc.identifier.pid | twk | - |
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