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dc.contributor.author김태환-
dc.date.accessioned2019-11-26T05:29:17Z-
dc.date.available2019-11-26T05:29:17Z-
dc.date.issued2017-06-
dc.identifier.citationJOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v. 17, no. 6, page. 4176-4179en_US
dc.identifier.issn1533-4880-
dc.identifier.issn1533-4899-
dc.identifier.urihttps://www.ingentaconnect.com/content/asp/jnn/2017/00000017/00000006/art00087-
dc.identifier.urihttps://repository.hanyang.ac.kr/handle/20.500.11754/114592-
dc.description.abstractCurrent-voltage (I-V) curves for the Al/poly(methylmethacrylate) (PMMA)/AuCl3 nanoparticles embedded in PMMA layer/PMMA/indium-tin-oxide (ITO) devices at 300 K showed that the memory margins of the I-V curves were significantly affected by changing AuCl3 concentration. An ON/OFF ratio of 10(3) for the device with an AuCl3 nanoparticle concentration of 0.5 wt% was observed. The retention of the organic bistable devices (OBDs) was maintained for retention times larger than 1 x 10(4) s, indicative of the stability of the device. The memory mechanisms of the fabricated OBDs were described by using charge trapping and tunneling processes shown in the energy diagram and the I-V curves.en_US
dc.description.sponsorshipThis research was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (2016R1A2A1A05005502).en_US
dc.language.isoen_USen_US
dc.publisherAMER SCIENTIFIC PUBLISHERSen_US
dc.subjectAuCl3 Nanoparticlesen_US
dc.subjectPMMAen_US
dc.subjectConcentrationen_US
dc.subjectCharge Trappingen_US
dc.subjectTunnelingen_US
dc.titleEffect of the Concentration of the AuCl3 Nanoparticles Embedded in a Poly(Methylmethacrylate) Layer on the Electrical Characteristics in Organic Bistable Devicesen_US
dc.typeArticleen_US
dc.relation.no6-
dc.relation.volume17-
dc.identifier.doi10.1166/jnn.2017.13427-
dc.relation.page4176-4179-
dc.relation.journalJOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY-
dc.contributor.googleauthorLee, Nam Hyun-
dc.contributor.googleauthorKim, Tae Whan-
dc.relation.code2017011537-
dc.sector.campusS-
dc.sector.daehakCOLLEGE OF ENGINEERING[S]-
dc.sector.departmentDEPARTMENT OF ELECTRONIC ENGINEERING-
dc.identifier.pidtwk-
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COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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