Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 전형탁 | - |
dc.date.accessioned | 2019-11-26T02:47:10Z | - |
dc.date.available | 2019-11-26T02:47:10Z | - |
dc.date.issued | 2017-06 | - |
dc.identifier.citation | JOURNAL OF ALLOYS AND COMPOUNDS, v. 722, page. 259-264 | en_US |
dc.identifier.issn | 0925-8388 | - |
dc.identifier.issn | 1873-4669 | - |
dc.identifier.uri | https://www.sciencedirect.com/science/article/abs/pii/S0925838817320911?via%3Dihub | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/114500 | - |
dc.description.abstract | In this study, we investigated the effects of a sub-Ta layer on the self-forming barrier process of a Cu-V alloy on low-k dielectrics. To determine how the sub-Ta layer affects the V-based self-forming barrier performance, Cu-V/low-k and Cu-V/Ta/low-k samples were compared using various analysis methods. The thickness, chemical composition, and reliability performance of the V-based interlayer with or without the sub-Ta layer were determined by transmission electron microscopy (TEM), X-ray photoemission spectroscopy (XPS), and thermal stability analysis, respectively. Although the sub-Ta layer adversely affected the decrease of the sheet resistance of the Cu alloy and the formation of a V-based interlayer, the experimental results revealed that the Cu-V/Ta/low-k samples exhibited good reliability and barrier properties, indicating that these properties for a Cu-V barrier layer can be enhanced by introducing a thin Ta sub-layer. XPS analysis showed that the sub-Ta layer affects the formation of a V oxide layer not only by blocking the diffusion of V atoms, but also due to the formation of Ta oxide. In the case of a V-based interlayer with a sub-Ta layer, both Ta2O5 and V2O5 compounds were formed on the low-k layer. Furthermore, according to the leakage current results, although the introduction of the sub-Ta layer improved the reliability and thermal stability of the self-forming barrier process, the Cu-V/Ta/low-k/Si structures demonstrated increased current densities under the 550 degrees C thermal stress condition. This indicates that the Cu-V alloy with the sub-Ta layer needs to be further investigated to improve the thermal stability. (C) 2017 Elsevier B.V. All rights reserved. | en_US |
dc.description.sponsorship | This work was performed with support from Samsung Electronics Co. and TEM operators at the Industry-University Cooperation Foundation of Hanyang University. | en_US |
dc.language.iso | en_US | en_US |
dc.publisher | ELSEVIER SCIENCE SA | en_US |
dc.subject | Cu interconnect | en_US |
dc.subject | Diffusion barrier | en_US |
dc.subject | Cu-V alloy | en_US |
dc.subject | Ta | en_US |
dc.subject | Low-k dielectric | en_US |
dc.title | Investigation of the barrier properties of copper-vanadium alloys with a sub-tantalum layer on low-k dielectrics | en_US |
dc.type | Article | en_US |
dc.relation.volume | 722 | - |
dc.identifier.doi | 10.1016/j.jallcom.2017.06.103 | - |
dc.relation.page | 259-264 | - |
dc.relation.journal | JOURNAL OF ALLOYS AND COMPOUNDS | - |
dc.contributor.googleauthor | Park, Jae-Hyung | - |
dc.contributor.googleauthor | Kim, Kyoung-Deok | - |
dc.contributor.googleauthor | Jeon, Hyeong-Tag | - |
dc.contributor.googleauthor | Park, Jong-Wan | - |
dc.relation.code | 2017011593 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DIVISION OF MATERIALS SCIENCE AND ENGINEERING | - |
dc.identifier.pid | hjeon | - |
dc.identifier.orcid | http://orcid.org/0000-0003-2502-7413 | - |
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