Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 박진섭 | - |
dc.date.accessioned | 2019-11-25T06:30:33Z | - |
dc.date.available | 2019-11-25T06:30:33Z | - |
dc.date.issued | 2017-05 | - |
dc.identifier.citation | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v. 17, no. 6, page. 4073-4077 | en_US |
dc.identifier.issn | 1533-4880 | - |
dc.identifier.issn | 1533-4899 | - |
dc.identifier.uri | https://www.ingentaconnect.com/content/asp/jnn/2017/00000017/00000006/art00065;jsessionid=ndj6ggbyr0fg.x-ic-live-01 | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/114175 | - |
dc.description.abstract | We report a method for enhancing light extraction in GaN-based light-emitting diodes (LEDs) using hollow silica (SiO2) nanospheres (HSNs). To create the HSNs formed on the surface of the LED, a polystyrene (PS) core was removed by a thermal annealing process from synthesized PS/SiO2 core/shell structures. HSN-coated LEDs show a dramatic improvement in electroluminescence (EL) intensity among different surface structured LEDs coated with bare silica nanospheres and without any nanostructures. The finite-difference time-domain simulation results are in accordance with experimentally observed ones. The enhancement in EL intensity using HSNs coated LED can be attributed to the increase in the probability of light escape by reducing Fresnel reflection and by frequent light scattering within the nanospheres. | en_US |
dc.description.sponsorship | This research was supported by the Basic Science Research Program of the National Research Foundation of Korea (NRF), funded by the Ministry of Education, Science and Technology (NRF-2015R1A1A1A05027848). K. Kim was supported by the Occasional Technology Development Project for Industrial Site Core Technology of the Ministry of Trade, Industry and Energy (No. 10054694). | en_US |
dc.language.iso | en_US | en_US |
dc.publisher | AMER SCIENTIFIC PUBLISHERS | en_US |
dc.subject | Light-Emitting Diode | en_US |
dc.subject | GaN | en_US |
dc.subject | Hollow Nanosphere | en_US |
dc.subject | Light Extraction | en_US |
dc.subject | FDTD | en_US |
dc.title | Light Extraction Enhancement of GaN-Based Light-Emitting Diodes Using Hollow Silica Nanospheres | en_US |
dc.type | Article | en_US |
dc.relation.no | 6 | - |
dc.relation.volume | 17 | - |
dc.identifier.doi | 10.1166/jnn.2017.13393 | - |
dc.relation.page | 4073-4077 | - |
dc.relation.journal | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | - |
dc.contributor.googleauthor | Shin, Dong Su | - |
dc.contributor.googleauthor | Kim, Taek Gon | - |
dc.contributor.googleauthor | Kim, Dongjun | - |
dc.contributor.googleauthor | Kim, Kyoung-Kook | - |
dc.contributor.googleauthor | Park, Jinsub | - |
dc.relation.code | 2017011537 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DEPARTMENT OF ELECTRONIC ENGINEERING | - |
dc.identifier.pid | jinsubpark | - |
dc.identifier.researcherID | N-3654-2019 | - |
dc.identifier.orcid | http://orcid.org/0000-0003-1079-5532 | - |
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