Silicon oxide film deposited at room temperatures using high-working pressure plasma-enhanced chemical vapor deposition: Effect of O-2 flow rate

Abstract

Silicon oxide films were deposited by high-worldng-pressure plasma-enhanced chemical vapor deposition using hexamethyldisiloxane and O-2/He plasma as the precursor and the reactant, respectively. As the O-2 flow rate increased during the process, the plasma density of O-2 and He decreased due to reduction in the partial pressure of He, which affected the composition of O/Si in the silicon oxide films. Consequently, we found out that the compositional ratio of SiO2/SiO could be modulated by O-2 flow conditions during the high-working-pressure plasma-enhanced chemical vapor deposition process. Additionally, it was observed that the water vapor transmission rate reduced with an increase in the O-2 flow rate because of a compositional change in the silicon oxide films.