Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 최창환 | - |
dc.date.accessioned | 2019-11-25T04:10:53Z | - |
dc.date.available | 2019-11-25T04:10:53Z | - |
dc.date.issued | 2017-05 | - |
dc.identifier.citation | MICROELECTRONIC ENGINEERING, v. 178, page. 266-270 | en_US |
dc.identifier.issn | 0167-9317 | - |
dc.identifier.issn | 1873-5568 | - |
dc.identifier.uri | https://www.sciencedirect.com/science/article/abs/pii/S0167931717302368?via%3Dihub | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/114039 | - |
dc.description.abstract | We have studied the electrical characteristics of both n-type and p-type fully depleted silicon on insulator (FDSOI) tunnel field-effect transistors (TFETs) by modulating Al2O3 fraction (25%, 50%) within atomic layer deposited HfAlOx gate dielectric. Compared to HfO2 alone, lower subthreshold swing (S.S), higher I-on,/I-off, and stronger threshold voltage (V-th) immunity against electrical stress are obtained for both n-type and p-type TFETs by adopting nano-laminated atomic layer deposited HfAlOx, attributed to the increased band gap and interfacial layer scavenging effect. (C) 2017 Elsevier B.V. All rights reserved. | en_US |
dc.description.sponsorship | This research was supported by Future Semiconductor Device Technology Development Program (10044842) as well as the Industrial Technology Innovation Program (10054882) funded By MOTIE (Ministry of Trade, Industry & Energy) and KSRC (Korea Semiconductor Research Consortium). | en_US |
dc.language.iso | en_US | en_US |
dc.publisher | ELSEVIER SCIENCE BV | en_US |
dc.subject | TFET | en_US |
dc.subject | Subthreshold swing | en_US |
dc.subject | Hafnium aluminum oxide | en_US |
dc.subject | Atomic layer deposition | en_US |
dc.title | Improved performance of gate-last FDSOI tunnel field-effect-transistors (TFETs) with modulating Al2O3 composition in atomic layer deposited HfAlOx gate dielectrics | en_US |
dc.type | Article | en_US |
dc.relation.volume | 178 | - |
dc.identifier.doi | 10.1016/j.mee.2017.05.039 | - |
dc.relation.page | 266-270 | - |
dc.relation.journal | MICROELECTRONIC ENGINEERING | - |
dc.contributor.googleauthor | Lim, Donghwan | - |
dc.contributor.googleauthor | Lee, Jae Ho | - |
dc.contributor.googleauthor | Choi, Changhwan | - |
dc.relation.code | 2017001998 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DIVISION OF MATERIALS SCIENCE AND ENGINEERING | - |
dc.identifier.pid | cchoi | - |
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