Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 박진성 | - |
dc.date.accessioned | 2019-11-25T01:24:47Z | - |
dc.date.available | 2019-11-25T01:24:47Z | - |
dc.date.issued | 2017-05 | - |
dc.identifier.citation | ACS APPLIED MATERIALS & INTERFACES, v. 9, no. 24, page. 20656-20663 | en_US |
dc.identifier.issn | 1944-8244 | - |
dc.identifier.issn | 1944-8252 | - |
dc.identifier.uri | https://pubs.acs.org/doi/10.1021/acsami.7b04235 | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/113946 | - |
dc.description.abstract | Zinc tin oxide (Zn-Sn-O, or ZTO) semiconductor layers were synthesized based on solution processes, of which one type involves the conventional spin coating method and the other is grown by mist chemical vapor deposition (mist-CVD). Liquid precursor solutions are used in each case, with tin chloride and zinc chloride (1:1) as solutes in solvent mixtures of acetone and deionized water. Mist-CVD ZTO films are mostly polycrystalline, while those synthesized by spin-coating are amorphous. Thin-film transistors based on mist-CVD ZTO active layers exhibit excellent electron transport properties with a saturation mobility of 14.6 cm(2)/(V s), which is superior to that of their spin-coated counterparts (6.88 cm(2)/(V s)). X-ray photoelectron spectroscopy (XPS) analyses suggest that the mist-CVD ZTO films contain relatively small amounts of oxygen vacancies and, hence, lower free-carrier concentrations. The enhanced electron mobility of mist-CVD ZTO is therefore anticipated to be associated with the electronic band structure, which is examined by X-ray absorption near-edge structure (XANES) analyses, rather than the density of electron carriers. | en_US |
dc.description.sponsorship | This work was supported by the Industry Technology R&D program of MOTIE/KEIT [10051080 and 10051403] and KDRC (Korea Display Research Corporation). | en_US |
dc.language.iso | en_US | en_US |
dc.publisher | AMER CHEMICAL SOC | en_US |
dc.subject | Mist - CVD | en_US |
dc.subject | sol-gel process | en_US |
dc.subject | zinc tin oxide | en_US |
dc.subject | tin films transistors (tfts) | en_US |
dc.subject | solution process | en_US |
dc.subject | atmospheric pressure | en_US |
dc.title | High-Performance Zinc Tin Oxide Semiconductor Grown by Atmospheric-Pressure Mist-CVD and the Associated Thin-Film Transistor Properties | en_US |
dc.type | Article | en_US |
dc.relation.no | 24 | - |
dc.relation.volume | 9 | - |
dc.identifier.doi | 10.1021/acsami.7b04235 | - |
dc.relation.page | 20656-20663 | - |
dc.relation.journal | ACS APPLIED MATERIALS & INTERFACES | - |
dc.contributor.googleauthor | Park, Jozeph | - |
dc.contributor.googleauthor | Oh, Keun-Tae | - |
dc.contributor.googleauthor | Kim, Dong-Hyun | - |
dc.contributor.googleauthor | Jeong, Hyun-Jun | - |
dc.contributor.googleauthor | Park, Yun Chang | - |
dc.contributor.googleauthor | Kim, Hyun-Suk | - |
dc.contributor.googleauthor | Park, Jin-Seong | - |
dc.relation.code | 2017001478 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DIVISION OF MATERIALS SCIENCE AND ENGINEERING | - |
dc.identifier.pid | jsparklime | - |
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