Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 박원일 | - |
dc.date.accessioned | 2019-11-24T15:10:13Z | - |
dc.date.available | 2019-11-24T15:10:13Z | - |
dc.date.issued | 2017-04 | - |
dc.identifier.citation | CRYSTENGCOMM, v. 19, no. 15, page. 2007-2012 | en_US |
dc.identifier.isbn | 10.1039/c7ce00057j | - |
dc.identifier.issn | 1466-8033 | - |
dc.identifier.uri | https://pubs.rsc.org/en/content/articlelanding/2017/CE/C7CE00057J#!divAbstract | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/113711 | - |
dc.description.abstract | We demonstrate the epitaxial growth of three-dimensional (3D) GaN single crystal arrays through metal-organic vapor phase epitaxy (MOVPE) on lattice-matched ZnO templates that were achieved via hydrothermal growth in which we controlled the position, size and morphology of the layer. To prevent collapse of the crystals during MOVPE growth, graphene sheets were employed as a protection/ mask layer, and initial GaN growth was performed at a relatively low temperature under hydrogen-depleted conditions. Temperature-dependent growth behaviors of GaN crystals on diverse types of ZnO templates can facilitate the control of hexagonal crystal shapes including pencil, tent and plate shapes. Furthermore, a 3D light emitting crystal array was demonstrated through subsequent growth of high-quality n-type and p-type GaN layers. | en_US |
dc.description.sponsorship | This work was supported by the National Research Foundation of Korea (NRF) funded by the Ministry of science, ICT and Future Planning (MSIP) (No. 2015R1A2A2A11001426, No. 2016K1A4A3914691). G.-C.Y. acknowledges support by the Global Research Laboratory Program (2015K1A1A2033332) through the NRF funded by the MSIP. | en_US |
dc.language.iso | en_US | en_US |
dc.publisher | ROYAL SOC CHEMISTRY | en_US |
dc.subject | LARGE-SCALE SYNTHESIS | en_US |
dc.subject | VAPOR-PHASE EPITAXY | en_US |
dc.subject | OPTOELECTRONIC DEVICES | en_US |
dc.subject | PHOTONIC CRYSTALS | en_US |
dc.subject | CONTROLLED GROWTH | en_US |
dc.subject | SURFACE POLARITY | en_US |
dc.subject | P-GAN | en_US |
dc.subject | ZNO | en_US |
dc.subject | NANOSTRUCTURES | en_US |
dc.subject | GRAPHENE | en_US |
dc.title | Three-dimensionally-architectured GaN light emitting crystals | en_US |
dc.type | Article | en_US |
dc.relation.no | 15 | - |
dc.relation.volume | 19 | - |
dc.relation.page | 2007-2012 | - |
dc.relation.journal | CRYSTENGCOMM | - |
dc.contributor.googleauthor | Yang, Dong Won | - |
dc.contributor.googleauthor | Yoo, Dongha | - |
dc.contributor.googleauthor | Lee, Won Woo | - |
dc.contributor.googleauthor | Lee, Jung Min | - |
dc.contributor.googleauthor | Yi, Gyu-Chul | - |
dc.contributor.googleauthor | Park, Won Il | - |
dc.relation.code | 2017003058 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DIVISION OF MATERIALS SCIENCE AND ENGINEERING | - |
dc.identifier.pid | wipark | - |
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