Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 정재경 | - |
dc.date.accessioned | 2019-11-21T07:50:44Z | - |
dc.date.available | 2019-11-21T07:50:44Z | - |
dc.date.issued | 2017-03 | - |
dc.identifier.citation | ACS APPLIED MATERIALS & INTERFACES, v. 9, no. 12, page. 10904-10913 | en_US |
dc.identifier.issn | 1944-8244 | - |
dc.identifier.uri | https://pubs.acs.org/doi/10.1021/acsami.7b01090 | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/113317 | - |
dc.description.abstract | ZnO-based oxide films are emerging as high-performance semiconductors for field-effect transistors (FETs) in optoelectronics. Carrier mobility and stability in these FETs are improved by introducing indium (In) and gallium (Ga) cations, respectively. However, the strong trade-off between the mobility and stability, which come from In or Ga incorporation, still limits the widespread use of metal oxide FETs in ultrahigh pixel density and device area-independent flat panel applications. We demonstrated that the incorporation of antimony (Sb) cations in amorphous zinc indium oxide (ZIO) simultaneously enhanced the field-effect mobility (mu(FET)) and electrical stability of the resulting Sb-doped ZIO FETs. The rationale for the unexpected synergic effect was related to the unique electron configuration of Sb5+ ([Kr]4d(10)5s(0)5p(0)). However, the benefit of Sb doping was not observed in the zinc tin oxide (ZTO) system. All the Sb-doped ZTO FETs suffered from a reduction in mu(FET) and a deterioration of gate bias stress stability with an increase in Sb loading. This can be attributed to the formation of heterogeneous defects due to Sb-induced phase separation and the creation of Sb3+ induced acceptor-like trap states. | en_US |
dc.description.sponsorship | This work was supported by the Industrial Strategic Technology Development Program through the Ministry of Knowledge Economy/Ministry of Energy, Industry and Trade under Grant 10048560 and the Center for Advanced Soft Electronics under the Global Frontier Research Program (2012M3A6A5055225). | en_US |
dc.language.iso | en_US | en_US |
dc.publisher | AMER CHEMICAL SOC | en_US |
dc.subject | antimony doping | en_US |
dc.subject | solution process | en_US |
dc.subject | field-effect transistor | en_US |
dc.subject | zinc indium oxide | en_US |
dc.subject | zinc tin oxide | en_US |
dc.subject | bias stability | en_US |
dc.title | Comparative study of antimony doping effects on the performance of solution-processed ZIO and ZTO field-effect transistors | en_US |
dc.type | Article | en_US |
dc.relation.volume | 9 | - |
dc.identifier.doi | 10.1021/acsami.7b01090 | - |
dc.relation.page | 10904-10913 | - |
dc.relation.journal | ACS APPLIED MATERIALS & INTERFACES | - |
dc.contributor.googleauthor | Baek, Jong Han | - |
dc.contributor.googleauthor | Seol, Hyunju | - |
dc.contributor.googleauthor | Cho, Kilwon | - |
dc.contributor.googleauthor | Yang, Hoichang | - |
dc.contributor.googleauthor | Jeong, Jae Kyeong | - |
dc.relation.code | 2017001478 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DEPARTMENT OF ELECTRONIC ENGINEERING | - |
dc.identifier.pid | jkjeong1 | - |
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