Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 박진성 | - |
dc.date.accessioned | 2019-11-21T06:36:55Z | - |
dc.date.available | 2019-11-21T06:36:55Z | - |
dc.date.issued | 2017-03 | - |
dc.identifier.citation | CERAMICS INTERNATIONAL, v. 43, no. 10, page. 7784-7788 | en_US |
dc.identifier.issn | 0272-8842 | - |
dc.identifier.issn | 1873-3956 | - |
dc.identifier.uri | https://www.sciencedirect.com/science/article/pii/S0272884217304595?via%3Dihub | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/113231 | - |
dc.description.abstract | The thermoelectric transport properties of atomic layer deposited (ALD) gallium doped zinc oxide (GZO) thin films were investigated to identify their potential as a thermoelectric material. The overall thermoelectric properties, such as the Seebeck coefficient and electrical conductivity, were probed as a function of Ga concentration in ZnO. The doping concentration was tuned by varying the ALD cycle ratio of zinc oxide and gallium oxide. The GZO was deposited at 250 degrees C and the doping concentration was modified from 1% to 10%. Sufficient thermoelectric properties appeared at a doping concentration of 1%. The crystallinity and electronic state, such as the effective mass, were investigated to determine the enhancement of the thermoelectric properties. The efficient Ga doping of GZO showed a Seebeck coefficient of 60 mu V/K and an electrical conductivity of 1808.32 S/cm, with a maximum power factor of 0.66 mW/mK(2). | en_US |
dc.description.sponsorship | This research was supported by Global Frontier Program through the Global Frontier Hybrid Interface Materials (GFHIM) of the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT & Future Planning (2013M3A6B1078870). | en_US |
dc.language.iso | en_US | en_US |
dc.publisher | ELSEVIER SCI LTD | en_US |
dc.subject | Atomic layer deposition | en_US |
dc.subject | Thermoelectrics | en_US |
dc.subject | Ga doped ZnO | en_US |
dc.subject | Thin films | en_US |
dc.title | Studies of thermoelectric transport properties of atomic layer deposited gallium-doped ZnO | en_US |
dc.type | Article | en_US |
dc.relation.no | 10 | - |
dc.relation.volume | 43 | - |
dc.identifier.doi | 10.1016/j.ceramint.2017.03.087 | - |
dc.relation.page | 7784-7788 | - |
dc.relation.journal | CERAMICS INTERNATIONAL | - |
dc.contributor.googleauthor | Lee, Seung-Hwan | - |
dc.contributor.googleauthor | Lee, Jung-Hoon | - |
dc.contributor.googleauthor | Choi, Seong-Jin | - |
dc.contributor.googleauthor | Park, Jin-Seong | - |
dc.relation.code | 2017001945 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DIVISION OF MATERIALS SCIENCE AND ENGINEERING | - |
dc.identifier.pid | jsparklime | - |
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