Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 소홍윤 | - |
dc.date.accessioned | 2019-11-21T04:24:50Z | - |
dc.date.available | 2019-11-21T04:24:50Z | - |
dc.date.issued | 2017-03 | - |
dc.identifier.citation | MICROELECTRONIC ENGINEERING, v. 173, page. 54-57 | en_US |
dc.identifier.issn | 0167-9317 | - |
dc.identifier.uri | https://www.sciencedirect.com/science/article/abs/pii/S0167931717301259?via%3Dihub | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/113098 | - |
dc.description.abstract | This work presents a simple and rapid lithography-free (i.e., maskless) microfabrication process for strain-sensitive aluminum gallium nitride (AlGaN)/GaN sensors. We microfabricated an AlGaN/GaN strain sensor through laser ablation of the underlying Si (111) substrate and direct bonding of aluminum wires to the sensor surface, creating a Schottky contact to the two-dimensional electron gas (2DEG). We measured the sensor's current-voltage operation while displacing the center of the membrane up to approximately 106 pm and characterized its sensitivity at from 0.5 to 2 V bias (i.e.,similar to 5 to 100 nA/mu m). This work advances the development of AlGaN/GaN-on-Si microelectronics (e.g., pressure sensors, accelerometers, and gyroscopes) using the simplified fabrication process, which eliminates lithography, metallization, and etching, and reduces the manufacturing time (5 min) and cost as well as the need for cleanroom environments. (C) 2017 Elsevier B.V. All rights reserved. | en_US |
dc.description.sponsorship | This work was supported in part by the National Science Foundation Engineering Research Center for Power Optimization of Electro Thermal Systems under Grant EEC-1449548 and in part by the National Science Foundation Graduate Research Fellowship under Grant DGE-114747. The authors are grateful for support from the Stanford Nanofabrication Facility (SNF) and Stanford Nano Shared Facilities (SNSF), supported by the National Science Foundation under award ECCS-1542152, at Stanford University. | en_US |
dc.language.iso | en_US | en_US |
dc.publisher | ELSEVIER SCIENCE BV | en_US |
dc.subject | Gallium nitride | en_US |
dc.subject | Microfabrication | en_US |
dc.subject | Strain sensor | en_US |
dc.subject | Laser ablation | en_US |
dc.subject | Direct wire bonding | en_US |
dc.title | Lithography-free microfabrication of AlGaN/GaN 2DEG strain sensors using laser ablation and direct wire bonding | en_US |
dc.type | Article | en_US |
dc.relation.volume | 173 | - |
dc.identifier.doi | 10.1016/j.mee.2017.03.012 | - |
dc.relation.page | 54-57 | - |
dc.relation.journal | MICROELECTRONIC ENGINEERING | - |
dc.contributor.googleauthor | Dowling, Karen M. | - |
dc.contributor.googleauthor | So, Hongyun | - |
dc.contributor.googleauthor | Toor, Anju | - |
dc.contributor.googleauthor | Chapin, Caitlin A. | - |
dc.contributor.googleauthor | Senesky, Debbie G. | - |
dc.relation.code | 2017001998 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DIVISION OF MECHANICAL ENGINEERING | - |
dc.identifier.pid | hyso | - |
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