Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 박진성 | - |
dc.date.accessioned | 2019-11-21T00:10:26Z | - |
dc.date.available | 2019-11-21T00:10:26Z | - |
dc.date.issued | 2017-02 | - |
dc.identifier.citation | CERAMICS INTERNATIONAL, v. 43, no. 2, page. 2095-2099 | en_US |
dc.identifier.issn | 0272-8842 | - |
dc.identifier.issn | 1873-3956 | - |
dc.identifier.uri | https://www.sciencedirect.com/science/article/pii/S0272884216319733?via%3Dihub | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/112929 | - |
dc.description.abstract | Silicon dioxide (SiO2) films are deposited by atomic layer deposition (ALD) at low temperatures from 100 to 200 degrees C using di-isopropylaminosilane (SiH3N(C3H7)(2), DIPAS) as the Si precursor and ozone as the reactant. The SiO2 films exhibit saturated growth behavior confirming the ALD process, showing a growth rate of 1.2 angstrom/ cycle at 150 degrees C, which increases to 2.3 angstrom/cycle at 250 degrees C. The activation energy of 0.24 eV, extracted from temperature range of 100-200 degrees C, corresponds to the reported energy barrier for reaction between DIPAS and surface OH. The temperature dependence of the growth rate can be explained in terms of the coverage and chemical reactivity of the thermally activated precursor on the surface. The ALD-SiO2 films deposited at 200 degrees C show properties such as refractive index, density, and roughness comparable to those of conventionally deposited SiO2, as well as low leakage current and high breakdown field. The fraction of Si-O bond increases at the expense of Si-OH at higher deposition temperature. | en_US |
dc.description.sponsorship | This work was partially supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (NRF-2013R1A1A2058660) and done by the MOTIE (Ministry of Trade, Industry & Energy (project number 10053098) and KSRC (Korea Semiconductor Research Consortium) support program for the development of the future semiconductor device. This work was supported by the Industry Technology R & D program of MOTIE/KEIT [10051080, Development of mechanical UI device core technology for small and medium-sized flexible display] and done by Business for Cooperative R & D between Industry, Academy, and Research Institute funded Korea Small and Medium Business Administration in 2016 (Grants No. C0352763). | en_US |
dc.language.iso | en_US | en_US |
dc.publisher | ELSEVIER SCI LTD | en_US |
dc.subject | Silicon dioxide | en_US |
dc.subject | Atomic layer deposition | en_US |
dc.subject | Low temperature | en_US |
dc.subject | DIPAS | en_US |
dc.title | Low temperature atomic layer deposition of SiO2 thin films using di-isopropylaminosilane and ozone | en_US |
dc.type | Article | en_US |
dc.relation.no | 2 | - |
dc.relation.volume | 43 | - |
dc.identifier.doi | 10.1016/j.ceramint.2016.10.186 | - |
dc.relation.page | 2095-2099 | - |
dc.relation.journal | CERAMICS INTERNATIONAL | - |
dc.contributor.googleauthor | Lee, Young-Soo | - |
dc.contributor.googleauthor | Choi, Dong-won | - |
dc.contributor.googleauthor | Shong, Bonggeun | - |
dc.contributor.googleauthor | Oh, Saeroonter | - |
dc.contributor.googleauthor | Park, Jin-Seong | - |
dc.relation.code | 2017001945 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DIVISION OF MATERIALS SCIENCE AND ENGINEERING | - |
dc.identifier.pid | jsparklime | - |
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