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dc.contributor.author권오경-
dc.date.accessioned2019-11-20T21:10:09Z-
dc.date.available2019-11-20T21:10:09Z-
dc.date.issued2017-02-
dc.identifier.citationIEEE ELECTRON DEVICE LETTERS, v. 38, no. 2, page. 195-198en_US
dc.identifier.issn0741-3106-
dc.identifier.issn1558-0563-
dc.identifier.urihttps://ieeexplore.ieee.org/document/7782375-
dc.identifier.urihttps://repository.hanyang.ac.kr/handle/20.500.11754/112852-
dc.description.abstractThis letter proposes a small-area and low-power scan driver using a coplanar amorphous indium-gallium- zinc oxide (a-IGZO) thin-film transistor (TFT) with a dual gate for TFT liquid crystal displays. The size of the pull-up TFT of the proposed scan driver is reduced by 30% when the ON-current of the coplanar a-IGZO TFT with a dual gate increases by 65%, when compared with the coplanar a-IGZO TFT with a single gate at a V-gs of 10 V and a V-ds of 10 V. This reduced size of the pull-up TFT decreases the capacitance of the clock signal (CLK) bus line. Owing to the reduced capacitance, the resistance of the CLK line can be increasedwhilemaintaining the resistance and capacitance delay of the CLK, and thereby the width of the CLK bus line can be reduced. Moreover, the dual gate, which forms an overlapped capacitor to bootstrap the gate voltage of the pull-up TFT, can further reduce the area of the scan driver. The width and measured power consumption of the fabricated scan driver with the proposed TFT are 2.63 mm and 2.41 W, which are both reduced by 20% compared with those of the scan driver with the conventional TFT.en_US
dc.language.isoen_USen_US
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INCen_US
dc.subjectDual gate structureen_US
dc.subjectindium-gallium-zinc-oxideen_US
dc.subjectsemiconductoren_US
dc.subjectscan driveren_US
dc.subjectlow-poweren_US
dc.subjectTFT-LCDen_US
dc.titleA Small-Area and Low-Power Scan Driver Using a Coplanar a-IGZO Thin-Film Transistor With a Dual-Gate for Liquid Crystal Displaysen_US
dc.typeArticleen_US
dc.relation.no2-
dc.relation.volume38-
dc.identifier.doi10.1109/LED.2016.2638832-
dc.relation.page195-198-
dc.relation.journalIEEE ELECTRON DEVICE LETTERS-
dc.contributor.googleauthorKim, Do-Sung-
dc.contributor.googleauthorKwon, Oh-Kyong-
dc.relation.code2017000338-
dc.sector.campusS-
dc.sector.daehakCOLLEGE OF ENGINEERING[S]-
dc.sector.departmentDEPARTMENT OF ELECTRONIC ENGINEERING-
dc.identifier.pidokwon-
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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