Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 송윤흡 | - |
dc.date.accessioned | 2019-11-20T10:27:40Z | - |
dc.date.available | 2019-11-20T10:27:40Z | - |
dc.date.issued | 2017-02 | - |
dc.identifier.citation | JAPANESE JOURNAL OF APPLIED PHYSICS, v. 56, no. 4S, Article no. 04CN02 | en_US |
dc.identifier.issn | 0021-4922 | - |
dc.identifier.issn | 1347-4065 | - |
dc.identifier.uri | https://iopscience.iop.org/article/10.7567/JJAP.56.04CN02 | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/112726 | - |
dc.description.abstract | Time-dependent dielectric breakdown (TDDB), which is used to measure reliability, depends on both the thickness of the tunnel barrier and bias voltage. In addition, the heat generated by self-heating in a magnetic tunneling junction (MTJ) affects TDDB. Therefore, we investigated TDDB with the self-heating effect for a MgO tunnel barrier with thicknesses of 1.1 and 1.2nm by the constant voltage stress (CVS) method. Using the results of this experiment, we predicted a TDDB of 1.0nm for the tunnel barrier. Also, we suggested the use of not only the CVS method, which is a common way of determining TDDB, but also the constant current stress (CCS) method, which compensates for the disadvantages of the CVS method. (C) 2017 The Japan Society of Applied Physics | en_US |
dc.description.sponsorship | This research was supported by Nano Material Technology Development Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT and Future Planning (NRF-2016M3A7B4910398). This research was also supported by the Ministry of Trade, Industry and Energy (10044608) and by a support program of the Korea Semiconductor Research Consortium for the development of future semiconductor devices. | en_US |
dc.language.iso | en_US | en_US |
dc.publisher | IOP PUBLISHING LTD | en_US |
dc.subject | ROOM-TEMPERATURE | en_US |
dc.subject | MAGNETORESISTANCE | en_US |
dc.subject | TECHNOLOGY | en_US |
dc.subject | INSERTION | en_US |
dc.title | Time-dependent dielectric breakdown of MgO magnetic tunnel junctions and novel test method | en_US |
dc.type | Article | en_US |
dc.relation.no | 4 | - |
dc.relation.volume | 56 | - |
dc.identifier.doi | 10.7567/JJAP.56.04CN02 | - |
dc.relation.page | 1-3 | - |
dc.relation.journal | JAPANESE JOURNAL OF APPLIED PHYSICS | - |
dc.contributor.googleauthor | Kim, Kyungjun | - |
dc.contributor.googleauthor | Choi, Chulmin | - |
dc.contributor.googleauthor | Oh, Youngtaek | - |
dc.contributor.googleauthor | Sukegawa, Hiroaki | - |
dc.contributor.googleauthor | Mitani, Seiji | - |
dc.contributor.googleauthor | Song, Yunheub | - |
dc.relation.code | 2017000941 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DEPARTMENT OF ELECTRONIC ENGINEERING | - |
dc.identifier.pid | yhsong2008 | - |
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