Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 송윤흡 | - |
dc.date.accessioned | 2019-11-20T09:21:46Z | - |
dc.date.available | 2019-11-20T09:21:46Z | - |
dc.date.issued | 2017-02 | - |
dc.identifier.citation | JAPANESE JOURNAL OF APPLIED PHYSICS, v. 56, no. 4S, Article no. 04CN03 | en_US |
dc.identifier.issn | 0021-4922 | - |
dc.identifier.issn | 1347-4065 | - |
dc.identifier.uri | https://iopscience.iop.org/article/10.7567/JJAP.56.04CN03 | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/112685 | - |
dc.description.abstract | The resistance distribution of a magnetic tunnel junction (MTJ) shows nonuniformity according to various MTJ parameters. Moreover, this resistance variation leads to write-current density variation, which can cause serious problems when designing peripheral circuits for spin transfer torque magnetoresistance random access memory (STT-MRAM) and commercializing gigabit STT-MRAM. Therefore, a macromodel of MTJ including resistance, tunneling magnetoresistance ratio (TMR), and critical current variations is required for circuit designers to design MRAM peripheral circuits, that can overcome the various effects of the variations, such as write failure and read failure, and realize STT-MRAM. In this study, we investigated a stochastic behavior macromodel of the write current dependence on the MTJ resistance variation. The proposed model can possibly be used to analyze the write current density in relation to the resistance and TMR variations of MTJ with various parameter variations. It can be very helpful for designing STT-MRAM circuits and simulating the operation of STT-MRAM devices considering MTJ variations. (C) 2017 The Japan Society of Applied Physics | en_US |
dc.description.sponsorship | The authors would like to thank C. K. Kim of the DRAM design team, Memory Division, Samsung Electronics Co., Ltd. for his support and helpful discussions. This research was supported by the Ministry of Trade, Industry and Energy (10044608) and by a support program of the Korea Semiconductor Research Consortium for the development of future semiconductor devices. This work was also supported by IDEC (EDA Tool). | en_US |
dc.language.iso | en_US | en_US |
dc.publisher | IOP PUBLISHING LTD | en_US |
dc.title | Stochastic macromodel of magnetic tunnel junction resistance variation and critical current dependence on resistance variation for SPICE simulation | en_US |
dc.type | Article | en_US |
dc.relation.volume | 56 | - |
dc.identifier.doi | 10.7567/JJAP.56.04CN03 | - |
dc.relation.page | 1-4 | - |
dc.relation.journal | JAPANESE JOURNAL OF APPLIED PHYSICS | - |
dc.contributor.googleauthor | Choi, Juntae | - |
dc.contributor.googleauthor | Song, Yunheub | - |
dc.relation.code | 2017000941 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DEPARTMENT OF ELECTRONIC ENGINEERING | - |
dc.identifier.pid | yhsong2008 | - |
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