Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 엄석기 | - |
dc.date.accessioned | 2019-11-20T08:58:34Z | - |
dc.date.available | 2019-11-20T08:58:34Z | - |
dc.date.issued | 2017-02 | - |
dc.identifier.citation | JOURNAL OF ALLOYS AND COMPOUNDS, v. 695, page. 1770-1777 | en_US |
dc.identifier.issn | 0925-8388 | - |
dc.identifier.issn | 1873-4669 | - |
dc.identifier.uri | https://www.sciencedirect.com/science/article/abs/pii/S092583881633465X?via%3Dihub | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/112666 | - |
dc.description.abstract | Mo doped V2O3 [V1-xMoxO2-x/2(x - 0, 0.5-1)] ceramic thin films were prepared on metal substrates by sol-gel dip coating and the influence of Mo addition on their microstructure, negative temperature coefficient (NTC) electrical transport properties and metal to insulator phase transition behavior were investigated by X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), high resolution transmission electron microscopy (HR-TEM), and resistance-temperature measurements. Resistivity-temperature curves (over a temperature range of 273.15-253.15 K) indicated that all of the prepared thin films have NTC effects, after annealing with 20 sccm N-2 at 673.15 K. It was demonstrated through microstructure analysis at Mo high concentration, (i.e., x > 0.07) it segregates at the V2O3 grain boundaries, causing scattering and distortion of the crystal lattice. Compared with the other V2O3 films, the films prepared at Mo x > 0.07 offered the high resistivity and moderate thermal constant (B) values. In particular, V2O3 doped with 10 mol % Mo showed excellent NTC properties and high resistivity (0.072 Omega cm). At sub-zero temperatures, the variation of electrical transport properties of the V2O3 films is correlated with Mo concentration, micro-structure and Joule effect. (C) 2016 Elsevier B.V. All rights reserved. | en_US |
dc.description.sponsorship | One of the authors M.K. gratefully acknowledges the New & Renewable Energy Program of the Korean Institute of Energy Technology Evaluation and Planning (KETEP) (No. 20142010102930) for the PDF financial support. | en_US |
dc.language.iso | en_US | en_US |
dc.publisher | ELSEVIER SCIENCE SA | en_US |
dc.subject | NTC oxide thin film ceramics | en_US |
dc.subject | Mo-doped vanadium oxides | en_US |
dc.subject | Mo concentration | en_US |
dc.subject | N-2 annealing process | en_US |
dc.subject | Phase characterization | en_US |
dc.subject | Electrical properties | en_US |
dc.title | Structural and low temperature electrical transport properties of Mo-doped vanadium oxide NTC ceramic thin films | en_US |
dc.type | Article | en_US |
dc.relation.volume | 695 | - |
dc.identifier.doi | 10.1016/j.jallcom.2016.11.007 | - |
dc.relation.page | 1770-1777 | - |
dc.relation.journal | JOURNAL OF ALLOYS AND COMPOUNDS | - |
dc.contributor.googleauthor | Karthikeyan, Muthukkumaran | - |
dc.contributor.googleauthor | Um, Sukkee | - |
dc.relation.code | 2017003338 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DIVISION OF MECHANICAL ENGINEERING | - |
dc.identifier.pid | sukkeeum | - |
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