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dc.contributor.author정두석-
dc.date.accessioned2019-10-14T01:52:22Z-
dc.date.available2019-10-14T01:52:22Z-
dc.date.issued2019-04-
dc.identifier.citationIEEE TRANSACTIONS ON ELECTRON DEVICES, v. 66, NO 4, Page. 1717-1721en_US
dc.identifier.issn0018-9383-
dc.identifier.issn1557-9646-
dc.identifier.urihttps://ieeexplore.ieee.org/document/8660576-
dc.identifier.urihttps://repository.hanyang.ac.kr/handle/20.500.11754/111013-
dc.description.abstractThe physical unclonable function (PUF) based on resistive random-access memory (RRAM) possesses a distinctive advantage that can offer higher security and lower cost than the traditional complementary metal-oxide-semiconductor-based Wcryptographic devices and other conventional PUFs. The intrinsic stochasticity of RRAM devices successfully provides attractive properties to implement PUF. In this paper, we present a novel multistate-based RRAM PUF to realize strong tolerance against attack. By applying multilevel states with bit shuffling to the RRAM PUF, the randomness and uniqueness were enhanced close to ideal values. In addition, the bit error rate was dramatically reduced using the temperature compensation mechanism. Moreover, our new method not only enables the generation of larger challenge-response pairs (CRPs) with less footprint but also can reconfigure CRPs.en_US
dc.description.sponsorshipThis work was supported by the National Research Foundation Program under Grant NRF-2017R1E1A1A01077484. The review of this paper was arranged by Editor U. E. Avci. (Gyo Sub Lee and Gun-Hwan Kim contributed equally to this work.)en_US
dc.language.isoenen_US
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INCen_US
dc.subjectHardware securityen_US
dc.subjectmultilevel cell (MLC)en_US
dc.subjectphysical unclonable function (PUF)en_US
dc.subjectrandomnessen_US
dc.subjectreliabilityen_US
dc.subjectresistive random-access memory (RRAM)en_US
dc.subjectuniquenessen_US
dc.titleEnhanced Reconfigurable Physical Unclonable Function Based on Stochastic Nature of Multilevel Cell RRAMen_US
dc.typeArticleen_US
dc.relation.no4-
dc.relation.volume66-
dc.identifier.doi10.1109/TED.2019.2898455-
dc.relation.page1717-1721-
dc.relation.journalIEEE TRANSACTIONS ON ELECTRON DEVICES-
dc.contributor.googleauthorLee, Gyo Sub-
dc.contributor.googleauthorKim, Gun-Hwan-
dc.contributor.googleauthorKwak, Kisung-
dc.contributor.googleauthorJeong, Doo Seok-
dc.contributor.googleauthorJu, Hyunsu-
dc.relation.code2019000238-
dc.sector.campusS-
dc.sector.daehakCOLLEGE OF ENGINEERING[S]-
dc.sector.departmentDIVISION OF MATERIALS SCIENCE AND ENGINEERING-
dc.identifier.piddooseokj-
dc.identifier.researcherIDY-3664-2019-
dc.identifier.orcidhttp://orcid.org/0000-0001-7954-2213-
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COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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