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dc.contributor.author최창환-
dc.date.accessioned2019-10-11T01:53:38Z-
dc.date.available2019-10-11T01:53:38Z-
dc.date.issued2019-05-
dc.identifier.citationADVANCED FUNCTIONAL MATERIALS, v. 29, NO 18, no. 1807504en_US
dc.identifier.issn1616-301X-
dc.identifier.issn1616-3028-
dc.identifier.urihttps://onlinelibrary.wiley.com/doi/full/10.1002/adfm.201807504-
dc.identifier.urihttps://repository.hanyang.ac.kr/handle/20.500.11754/110979-
dc.description.abstractCarbon-based electronic devices are suitable candidates for bioinspired electronics due to their low cost, eco-friendliness, mechanical flexibility, and compatibility with complementary metal-oxide-semiconductor technology. New types of materials such as graphene quantum dots (GQDs) have attracted attention in the search for new applications beyond solar cells and energy harvesting due to their superior properties such as elevated photoluminescence, high chemical inertness, and excellent biocompatibility. In this paper, a biocompatible/organic electronic synapse based on nitrogen-doped graphene oxide quantum dots (N-GOQDs) is reported, which exhibits threshold resistive switching via silver cation (Ag+) migration dynamics. In analogy to the calcium (Ca2+) ion dynamics of biological synapses, important biological synapse functions such as short-term potentiation (STP), paired-pulse facilitation, and transition from STP to long-term plasticity behaviors are replicated. Long-term depression behavior is also evaluated and specific spike-timing dependent plasticity is assessed. In addition, elaborated switching mechanism of biosimilar Ag+ migration dynamics provides the potential for using N-GOQD-based artificial synapse in future biocompatible neuromorphic systems.en_US
dc.description.sponsorshipA.S.S. and M.A. contributed equally to this work. This research was supported by the Nano Material Technology Development Programs through the National Research Foundation of Korea (NRF) funded by the Ministry of science, ICT & Future Planning (NRF-2016M3A7B4910426) as well as (NRF-2015M3A7B7045490). This work was also supported by the Global Frontier R&D Program on Center for Multiscale Energy System Research (No. 2012M3A6A7054856) and Research Program (2018R1A2B2006708) funded by the National Research Foundation under the Ministry of Science, ICT & Future Planning, Republic of Korea.en_US
dc.language.isoenen_US
dc.publisherWILEY-V C H VERLAG GMBHen_US
dc.subjectartificial synapseen_US
dc.subjectgrapheneen_US
dc.subjectmemristorsen_US
dc.subjectnitrogen dopingen_US
dc.subjectquantum dotsen_US
dc.subjectthreshold switchingen_US
dc.titleSilver-Adapted Diffusive Memristor Based on Organic Nitrogen-Doped Graphene Oxide Quantum Dots (N-GOQDs) for Artificial Biosynapse Applicationsen_US
dc.typeArticleen_US
dc.relation.no18-
dc.relation.volume29-
dc.identifier.doi10.1002/adfm.201807504-
dc.relation.page7504-7514-
dc.relation.journalADVANCED FUNCTIONAL MATERIALS-
dc.contributor.googleauthorSokolov, Andrey Sergeevich-
dc.contributor.googleauthorAli, Mumtaz-
dc.contributor.googleauthorRiaz, Rabia-
dc.contributor.googleauthorAbbas, Yawar-
dc.contributor.googleauthorKo, Min Jae-
dc.contributor.googleauthorChoi, Changhwan-
dc.relation.code2019001075-
dc.sector.campusS-
dc.sector.daehakCOLLEGE OF ENGINEERING[S]-
dc.sector.departmentDIVISION OF MATERIALS SCIENCE AND ENGINEERING-
dc.identifier.pidcchoi-
dc.identifier.orcidhttps://orcid.org/0000-0002-8386-3885-
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COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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