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ZnO composite nanolayer with mobility edge quantization for multi-value logic transistors

Title
ZnO composite nanolayer with mobility edge quantization for multi-value logic transistors
Author
윤민호
Keywords
TOTAL-ENERGY CALCULATIONS; THIN-FILMS
Issue Date
2019-04
Publisher
NATURE PUBLISHING GROUP
Citation
NATURE COMMUNICATIONS, v. 10, no. 1998
Abstract
A quantum confined transport based on a zinc oxide composite nanolayer that has conducting states with mobility edge quantization is proposed and was applied to develop multi-value logic transistors with stable intermediate states. A composite nanolayer with zinc oxide quantum dots embedded in amorphous zinc oxide domains generated quantized conducting states at the mobility edge, which we refer to as "mobility edge quantization". The unique quantized conducting state effectively restricted the occupied number of carriers due to its low density of states, which enable current saturation. Multi-value logic transistors were realized by applying a hybrid superlattice consisting of zinc oxide composite nano-layers and organic barriers as channels in the transistor. The superlattice channels produced multiple states due to current saturation of the quantized conducting state in the composite nano-layers. Our multi-value transistors exhibited excellent performance characteristics, stable and reliable operation with no current fluctuation, and adjustable multi-level states.
URI
https://www.nature.com/articles/s41467-019-09998-xhttps://repository.hanyang.ac.kr/handle/20.500.11754/110599
ISSN
2041-1723
DOI
10.1038/s41467-019-09998-x
Appears in Collections:
RESEARCH INSTITUTE[S](부설연구소) > THE RESEARCH INSTITUTE FOR NATURAL SCIENCES(자연과학연구소) > Articles
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